| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2N5252 |
Silicon NPN Transistor |
Motorola |
| 242 |
2N5252 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 243 |
2N5253 |
Silicon NPN Transistor |
Motorola |
| 244 |
2N5253 |
BIPOLAR NPN DEVICE IN A HERMETICALLY SEALED TO39 METAL PACKAGE |
SemeLAB |
| 245 |
2N5254 |
Silicon PNP Transistor |
Motorola |
| 246 |
2N5255 |
Silicon PNP Transistor |
Motorola |
| 247 |
2N5256 |
Silicon PNP Transistor |
Motorola |
| 248 |
2N5257 |
THYRISTOR |
Motorola |
| 249 |
2N5258 |
THYRISTOR |
Motorola |
| 250 |
2N5259 |
THYRISTOR |
Motorola |
| 251 |
2N525A |
Germanium PNP Transistor |
Motorola |
| 252 |
2N526 |
Germanium PNP Transistor |
COMPELEC |
| 253 |
2N526 |
Germanium transistor, amplification and low speed switching |
COSEM |
| 254 |
2N526 |
Low frequency germanium transistor |
COSEM |
| 255 |
2N526 |
Low power, high frequency germanium transistor PNP |
IPRS Baneasa |
| 256 |
2N526 |
PNP germanium transistor to be used in the audio-frequency range |
Motorola |
| 257 |
2N526 |
Germanium PNP Transistor |
Motorola |
| 258 |
2N526 |
Trans GP BJT PNP 0.5A |
New Jersey Semiconductor |
| 259 |
2N526 |
Germanium PNP transistor, low level LF amplification |
SESCOSEM |
| 260 |
2N5260 |
THYRISTOR |
Motorola |
| 261 |
2N5261 |
THYRISTOR |
Motorola |
| 262 |
2N5262 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 263 |
2N5262 |
Silicon NPN Transistor |
Motorola |
| 264 |
2N5262 |
BJT |
New Jersey Semiconductor |
| 265 |
2N5262 |
Silicon NPN High-Speed Switching Transistor |
RCA Solid State |
| 266 |
2N5264 |
Silicon NPN Transistor |
Motorola |
| 267 |
2N5264 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
| 268 |
2N5265 |
P-Channel junction depletion mode (Type A) field-effect transistor |
Motorola |
| 269 |
2N5265 |
P-Channel Junction FET (Field-Effect Transistor) |
Motorola |
| 270 |
2N5265 |
Trans GP BJT PNP 0.5A |
New Jersey Semiconductor |
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