| No. |
Part Name |
Description |
Manufacturer |
| 211 |
BLY58 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
| 212 |
BLY87 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
| 213 |
BLY88 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
| 214 |
BLY89 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
| 215 |
BUK7Y3R5-40E |
N-channel 40 V, 3.5 mΩ standard level MOSFET in LFPAK56 |
Nexperia |
| 216 |
BUK7Y3R5-40E |
N-channel 40 V, 3.5 mΩ standard level MOSFET in LFPAK56 |
NXP Semiconductors |
| 217 |
BUK7Y3R5-40H |
N-channel 40 V, 3.5 mΩ standard level MOSFET in LFPAK56 |
Nexperia |
| 218 |
CGY0918 |
GaAs MMIC (Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package) |
Siemens |
| 219 |
CGY184 |
GaAs MMIC (Power amplifier for PCN applications 2.5 W 34dBm output power at 3.5 V) |
Siemens |
| 220 |
CGY340 |
3.5 GHz WLL-Up-Converter IC |
Infineon |
| 221 |
CGY353 |
3.5 GHz WLL Power Amplifier |
Infineon |
| 222 |
CGY353E6327 |
3.5 GHz WLL Power Amplifier |
Infineon |
| 223 |
CGY360 |
3.5 GHz WLL-Down-Converter IC |
Infineon |
| 224 |
CGY96 |
GaAs MMIC (Power amplifier for GSM class 4 phones 3.2 W 35dBm output power at 3.5 V Overall power added efficiency 50%) |
Siemens |
| 225 |
CLY2 |
High Power Packaged GaAs FET; +23.5 dBm |
TriQuint Semiconductor |
| 226 |
CMM1331-KU |
12.7 to 13.5 GHz, 1.5 watt power amplifier |
CELERITEK |
| 227 |
CMM1331-SM |
12.7 to 13.5 GHz, 1.5 watt power amplifier |
CELERITEK |
| 228 |
CMM3566-LC |
3.45 to 3.5 GHz, 7 V, W-CDMA power amplifier |
CELERITEK |
| 229 |
CMM3566-LC-000T |
3.45 to 3.5 GHz, 7 V, W-CDMA power amplifier |
CELERITEK |
| 230 |
CMPA2735015D |
15W, 2.7 to 3.5 GHz, 50V, GaN MMIC Power Amplifier, Bare Die |
Wolfspeed |
| 231 |
CMPA2735030D |
30W, 2.7 to 3.5 GHz, 50V, GaN MMIC Power Amplifier, Bare Die |
Wolfspeed |
| 232 |
CMPA2735075D |
75W, 2.7 - 3.5 GHz, GaN MMIC Power Amplifier |
Wolfspeed |
| 233 |
CMPA2735075F |
75W, 2.7 - 3.5 GHz, GaN MMIC Power Amplifier |
Wolfspeed |
| 234 |
E2502H35 |
2.5 Gbits/s electroabsorption modulated isolated laser module (EM-ILM) for ultralong-reach applications. 600 km, standard fiber. ITU-T wavelength 1549.31 nm. Frequency 193.5 THz. |
Agere Systems |
| 235 |
G930T21D |
3.5 V 400 mA low dropout regulator |
Global Mixed-mode Technology |
| 236 |
G931T24B |
3.5 V 400 mA low dropout regulator |
Global Mixed-mode Technology |
| 237 |
G931T24D |
3.5 V 400 mA low dropout regulator |
Global Mixed-mode Technology |
| 238 |
G931T24T |
3.5 V 400 mA low dropout regulator |
Global Mixed-mode Technology |
| 239 |
HMC241QS16 |
GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 3.5 GHz |
Hittite Microwave Corporation |
| 240 |
HMC245QS16 |
GaAs MMIC SP3T NON-REFLECTIVE SWITCH, DC - 3.5 GHz |
Hittite Microwave Corporation |
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