| No. |
Part Name |
Description |
Manufacturer |
| 211 |
JANTXV1N4104CUR-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 212 |
JANTXV1N4104D-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 213 |
JANTXV1N4104DUR-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 214 |
JANTXV1N4104UR-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 215 |
JANTXV1N4104UR-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 216 |
JM38510/34104B2A |
Quad D Flip-Flop |
National Semiconductor |
| 217 |
JM38510/34104B2A |
Quad D Flip-Flop |
National Semiconductor |
| 218 |
JM38510/34104BEA |
Quad D Flip-Flop |
National Semiconductor |
| 219 |
JM38510/34104BEA |
Quad D Flip-Flop |
National Semiconductor |
| 220 |
JM38510/34104BFA |
Quad D Flip-Flop |
National Semiconductor |
| 221 |
JM38510/34104BFA |
Quad D Flip-Flop |
National Semiconductor |
| 222 |
JM38510_34104B2 |
Quad D Flip-Flop |
National Semiconductor |
| 223 |
JM38510_34104BE |
Quad D Flip-Flop |
National Semiconductor |
| 224 |
JM38510_34104BF |
Quad D Flip-Flop |
National Semiconductor |
| 225 |
KM416C4104C |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 226 |
KM416C4104CS-5 |
4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 4K refresh, 50ns |
Samsung Electronic |
| 227 |
KM416C4104CS-6 |
4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 4K refresh, 60ns |
Samsung Electronic |
| 228 |
KM416V4104B |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 229 |
KM416V4104BS-45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns |
Samsung Electronic |
| 230 |
KM416V4104BS-5 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns |
Samsung Electronic |
| 231 |
KM416V4104BS-6 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns |
Samsung Electronic |
| 232 |
KM416V4104BSL-45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power |
Samsung Electronic |
| 233 |
KM416V4104BSL-5 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
Samsung Electronic |
| 234 |
KM416V4104BSL-6 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power |
Samsung Electronic |
| 235 |
KM416V4104C |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 236 |
KM416V4104CS-45 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 237 |
KM416V4104CS-50 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns |
Samsung Electronic |
| 238 |
KM416V4104CS-60 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns |
Samsung Electronic |
| 239 |
KM416V4104CS-L45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power |
Samsung Electronic |
| 240 |
KM416V4104CS-L50 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
Samsung Electronic |
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