| No. |
Part Name |
Description |
Manufacturer |
| 241 |
KM416V4104CS-L60 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power |
Samsung Electronic |
| 242 |
KM44C4104A-5 |
50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 243 |
KM44C4104A-6 |
60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 244 |
KM44C4104A-7 |
70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 245 |
KM44C4104A-8 |
80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 246 |
KM44C4104AL-5 |
50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 247 |
KM44C4104AL-6 |
60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 248 |
KM44C4104AL-7 |
70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 249 |
KM44C4104AL-8 |
80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 250 |
KM44C4104ALL-5 |
50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 251 |
KM44C4104ALL-6 |
60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 252 |
KM44C4104ALL-7 |
70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 253 |
KM44C4104ALL-8 |
80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 254 |
KM44C4104ASL-5 |
50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 255 |
KM44C4104ASL-6 |
60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 256 |
KM44C4104ASL-7 |
70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 257 |
KM44C4104ASL-8 |
80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 258 |
KM44V4104BK |
V(cc): -0.5 to +4.6V; 1W; 50mA; 4M x 4-bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 259 |
KS57C4104 |
Single-Chip CMOS Microcontroller |
Samsung Electronic |
| 260 |
KS57P4104 |
Single-Chip CMOS Microcontroller |
Samsung Electronic |
| 261 |
KS86C4104 |
8-Bit Single-Chip CMOS Microcontrollers |
Samsung Electronic |
| 262 |
KS86P4104 |
8-Bit Single-Chip CMOS Microcontrollers |
Samsung Electronic |
| 263 |
LC4104C |
LCD Dot Matrix Segment Driver for STN Displays |
SANYO |
| 264 |
LH4104CG |
1.5 W, +/-18 V, fast setting high current operational amplifier |
National Semiconductor |
| 265 |
LH4104CN |
1.56 W, +/-18 V, fast setting high current operational amplifier |
National Semiconductor |
| 266 |
LH4104G |
1.5 W, +/-18 V, fast setting high current operational amplifier |
National Semiconductor |
| 267 |
MAX24104 |
15Gbps Quad Linear Equalizer |
MAXIM - Dallas Semiconductor |
| 268 |
MAX24104ELT+ |
15Gbps Quad Linear Equalizer |
MAXIM - Dallas Semiconductor |
| 269 |
MAX24104ELT+T |
15Gbps Quad Linear Equalizer |
MAXIM - Dallas Semiconductor |
| 270 |
MAX24104EVKIT# |
15Gbps Quad Linear Equalizer |
MAXIM - Dallas Semiconductor |
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