| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2N4250M |
Trans GP BJT PNP 40V |
New Jersey Semiconductor |
| 212 |
2N4870 |
Silicon unijunction transistor. 30V, 50mA. |
General Electric Solid State |
| 213 |
2N4871 |
Silicon unijunction transistor. 30V, 50mA. |
General Electric Solid State |
| 214 |
2N5031 |
NPN silicon high frequency transistor 2.5dB - 450MHz |
Motorola |
| 215 |
2N5032 |
NPN silicon high frequency transistor 3.0dB - 450MHz |
Motorola |
| 216 |
2N5109 |
NPN silicon high frequency transistor 1.2GHz - 50mAdc |
Motorola |
| 217 |
2N5836 |
NPN silicon high frequency transistor 2.0GHz - 50mAdc |
Motorola |
| 218 |
2N5849 |
NPN silicon RF power transistor 40W - 50MHz |
Motorola |
| 219 |
2N5943 |
NPN silicon high frequency transistor 1.2GHz - 50mAdc |
Motorola |
| 220 |
2N6027 |
Silicon programmable unijunction transistor, 40V, 150mA |
Planeta |
| 221 |
2N6028 |
Silicon programmable unijunction transistor, 40V, 150mA |
Planeta |
| 222 |
2N6166 |
NPN silicon RF power transistor 100 WATTS - 150MHz |
Motorola |
| 223 |
2N7002-G |
MOSFET, VDS=60V, ID=0.25A, PD=350mW |
Comchip Technology |
| 224 |
2N7002-HF |
Halogen Free MOSFET, VDS=60V, ID=0.25A, PD=350mW |
Comchip Technology |
| 225 |
2SA1366 |
150mW SMD PNP transistor, maximum rating: -50V Vceo, -400mA Ic, 90 to 500 hFE. Complementary 2SC3441 |
Isahaya Electronics Corporation |
| 226 |
2SA1576UBHZG |
PNP -50V -150mA General Purpose Transistor |
ROHM |
| 227 |
2SA1576UBHZGTL |
PNP -50V -150mA General Purpose Transistor |
ROHM |
| 228 |
2SA1774EBHZG |
PNP -50V -150mA General Purpose Transistor |
ROHM |
| 229 |
2SA1774EBHZGTL |
PNP -50V -150mA General Purpose Transistor |
ROHM |
| 230 |
2SA1995 |
450mW Lead frame PNP transistor, maximum rating: -50V Vceo, -100mA Ic, 120 to 560 hFE. |
Isahaya Electronics Corporation |
| 231 |
2SA542 |
Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW. |
USHA India LTD |
| 232 |
2SA733 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW. |
USHA India LTD |
| 233 |
2SB592 |
750mW NPN silicon transistor |
Micro Electronics |
| 234 |
2SB592A |
750mW NPN silicon transistor |
Micro Electronics |
| 235 |
2SB621 |
750mW NPN silicon transistor |
Micro Electronics |
| 236 |
2SB621A |
750mW NPN silicon transistor |
Micro Electronics |
| 237 |
2SC1674 |
TV PIF amplifier, FM tuner RF amplifier, mixer, occillator. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 20mA. |
USHA India LTD |
| 238 |
2SC1675 |
FM/AM RF amplifier, mixer, converter, oscillator,IF. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 50mA. |
USHA India LTD |
| 239 |
2SC1675 |
FM/AM RF amplifier, mixer, converter, oscillator,IF. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 50mA. |
USHA India LTD |
| 240 |
2SC1845 |
Audio frequency low noise amplifier. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 120V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 50mA. |
USHA India LTD |
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