| No. |
Part Name |
Description |
Manufacturer |
| 271 |
2SC4155A |
150mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 120 to 820 hFE. Improve on 2SC4155 |
Isahaya Electronics Corporation |
| 272 |
2SC4578 |
NPN Triple Diffused Planar Silicon Transistor 900V/50mA Switching Applications |
SANYO |
| 273 |
2SC4617EBHZG |
50V, 150mA, General purpose small signal amplifier (Corresponds to AEC-Q101) |
ROHM |
| 274 |
2SC4617EBHZGTL |
50V, 150mA, General purpose small signal amplifier (Corresponds to AEC-Q101) |
ROHM |
| 275 |
2SC481 |
Silicon NPN epitaxial planar transistor, 27-50MHz transceiver power amplifier applications |
TOSHIBA |
| 276 |
2SC5058S |
25V,50mA, 300MHz high-frequency amplifier transistor |
ROHM |
| 277 |
2SC5477 |
150mW SMD NPN transistor, maximum rating: 20V Vceo, 50mA Ic, 50 to (typ)148 hFE. High Frequency Amplification |
Isahaya Electronics Corporation |
| 278 |
2SC5477 |
150mW SMD NPN transistor, maximum rating: 20V Vceo, 50mA Ic, 50 to (typ)148 hFE. High Frequency Amplification |
Isahaya Electronics Corporation |
| 279 |
2SC5658-HF |
Halogen Free Transistor, VCBO=60V, VCEO=50V, VEBO=7V, IC=150mA |
Comchip Technology |
| 280 |
2SC838 |
Transistor. FM radio RF amp, mix. conv, osc, IF amp . Collector-base voltage Vcbo = 35V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 30mA. |
USHA India LTD |
| 281 |
2SC945 |
Transistor. Audio frequency amplifier high frequency osc. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 50V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 150mA. |
USHA India LTD |
| 282 |
2SC945 |
Transistor. Audio frequency amplifier high frequency osc. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 50V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 150mA. |
USHA India LTD |
| 283 |
2SC979 |
Silicon NPN epitaxial planar RF transistor fT=250MHz |
TOSHIBA |
| 284 |
2SC979A |
Silicon NPN epitaxial planar RF transistor fT=250MHz |
TOSHIBA |
| 285 |
2SC998 |
Silicon NPN epitaxial planar VHF transistor ft=450MHz |
TOSHIBA |
| 286 |
2SJ125 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -1 to -12 mA Idss. |
Isahaya Electronics Corporation |
| 287 |
2SJ498 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -0.6 to -12 mA Idss. |
Isahaya Electronics Corporation |
| 288 |
2SJ600 |
Pch power MOSFET 60V RDS(on)1=50m ohm MAX. MP-3 |
NEC |
| 289 |
2SJ600-Z |
Pch power MOSFET 60V RDS(on)1=50m ohm MAX. MP-3 |
NEC |
| 290 |
2SK2880 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss. |
Isahaya Electronics Corporation |
| 291 |
2SK433 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.6to 12 mA Idss. |
Isahaya Electronics Corporation |
| 292 |
2SK492 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 1 to 12 mA Idss. |
Isahaya Electronics Corporation |
| 293 |
3216CP-250MA |
3216CP Series Circuit Protector |
COOPER Electronic Technologies |
| 294 |
3216CP-750MA |
3216CP Series Circuit Protector |
COOPER Electronic Technologies |
| 295 |
3650MG |
Optically-Coupled Linear ISOLATION AMPLIFIERS |
Burr Brown |
| 296 |
3650MG |
Optically Coupled Linear Isolation Amplifier |
Texas Instruments |
| 297 |
3650MGHG |
Optically-Coupled Linear ISOLATION AMPLIFIERS |
Burr Brown |
| 298 |
3650MGHG1 |
Optically-Coupled Linear ISOLATION AMPLIFIERS |
Burr Brown |
| 299 |
3LN01C |
N-Channel Small Signal MOSFET 30V 150mA 3.7 Ohm Single CP |
ON Semiconductor |
| 300 |
3LN01S |
N-Channel Small Signal MOSFET 30V 150mA 3.7 Ohm Single SMCP |
ON Semiconductor |
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