No. |
Part Name |
Description |
Manufacturer |
211 |
2N6122 |
Silicon NPN Power Transistors TO-220 package |
Savantic |
212 |
2N6122 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
213 |
2N6123 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
214 |
2N6123 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
215 |
2N6123 |
40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
216 |
2N6123 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
217 |
2N6123 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
218 |
2N6123 |
4A complementary silicon plastic 40W power NPN transistor |
Motorola |
219 |
2N6123 |
Trans GP BJT NPN 80V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
220 |
2N6123 |
Silicon NPN Power Transistors TO-220 package |
Savantic |
221 |
2N6123 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
222 |
2N6124 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
223 |
2N6124 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
224 |
2N6124 |
40.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
225 |
2N6124 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V. |
General Electric Solid State |
226 |
2N6124 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
227 |
2N6124 |
4A complementary silicon plastic 40W power PNP transistor |
Motorola |
228 |
2N6124 |
Trans GP BJT PNP 45V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
229 |
2N6124 |
Silicon PNP Power Transistors TO-220 package |
Savantic |
230 |
2N6124 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
231 |
2N6125 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
232 |
2N6125 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
233 |
2N6125 |
40.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
234 |
2N6125 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
235 |
2N6125 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
236 |
2N6125 |
4A complementary silicon plastic 40W power PNP transistor |
Motorola |
237 |
2N6125 |
Trans GP BJT PNP 60V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
238 |
2N6125 |
Silicon PNP Power Transistors TO-220 package |
Savantic |
239 |
2N6125 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
240 |
2N6126 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
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