No. |
Part Name |
Description |
Manufacturer |
241 |
2N6124 |
40.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
242 |
2N6124 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V. |
General Electric Solid State |
243 |
2N6124 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
244 |
2N6124 |
4A complementary silicon plastic 40W power PNP transistor |
Motorola |
245 |
2N6124 |
PNP Power Transistor TO-220 |
National Semiconductor |
246 |
2N6124 |
PNP Power Transistor |
National Semiconductor |
247 |
2N6124 |
PNP silicon power transistor |
National Semiconductor |
248 |
2N6124 |
Trans GP BJT PNP 45V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
249 |
2N6124 |
Silicon PNP Power Transistors TO-220 package |
Savantic |
250 |
2N6124 |
Silicon epitaxial-base PNP medium power transistor |
SGS-ATES |
251 |
2N6124 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
252 |
2N6125 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
253 |
2N6125 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
254 |
2N6125 |
40.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
255 |
2N6125 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
256 |
2N6125 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
257 |
2N6125 |
4A complementary silicon plastic 40W power PNP transistor |
Motorola |
258 |
2N6125 |
PNP Power Transistor TO-220 |
National Semiconductor |
259 |
2N6125 |
PNP Power Transistor |
National Semiconductor |
260 |
2N6125 |
PNP silicon power transistor |
National Semiconductor |
261 |
2N6125 |
Trans GP BJT PNP 60V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
262 |
2N6125 |
Silicon PNP Power Transistors TO-220 package |
Savantic |
263 |
2N6125 |
Silicon epitaxial-base PNP medium power transistor |
SGS-ATES |
264 |
2N6125 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
265 |
2N6126 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
266 |
2N6126 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
267 |
2N6126 |
40.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
268 |
2N6126 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
269 |
2N6126 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
270 |
2N6126 |
4A complementary silicon plastic 40W power PNP transistor |
Motorola |
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