| No. |
Part Name |
Description |
Manufacturer |
| 211 |
24LC22A |
The Microchip Technology Inc. 24LC22A is a 256 x 8-bit dual-mode Electrically Erasable PROM. This device is designed for use in applications requiring storage and serial transmission of configuration and control information. Two modes of o |
Microchip |
| 212 |
24LC22A-I/P |
The Microchip Technology Inc. 24LC22A is a 256 x 8-bit dual-mode Electrically Erasable PROM. This device is designed for use in applications ... |
Microchip |
| 213 |
24LC22A-I/SN |
The Microchip Technology Inc. 24LC22A is a 256 x 8-bit dual-mode Electrically Erasable PROM. This device is designed for use in applications ... |
Microchip |
| 214 |
24LC22AT-I/SN |
The Microchip Technology Inc. 24LC22A is a 256 x 8-bit dual-mode Electrically Erasable PROM. This device is designed for use in applications ... |
Microchip |
| 215 |
281 |
High CMV, High Performance Isolation Amplifiers |
Intronics |
| 216 |
284J |
High CMV, High Performance Isolation Amplifiers |
Intronics |
| 217 |
286J |
High CMV, High Performance Isolation Amplifiers |
Intronics |
| 218 |
2N1613 |
0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
| 219 |
2N1711 |
0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
| 220 |
2N1893 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
| 221 |
2N1991 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 222 |
2N2102 |
1.000W RF NPN Metal Can Transistor. 65V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 223 |
2N2194 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. |
SemeLAB |
| 224 |
2N2218 |
0.800W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
| 225 |
2N2218 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. |
SemeLAB |
| 226 |
2N2218A |
0.800W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
| 227 |
2N2219 |
0.800W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 35 hFE. |
Continental Device India Limited |
| 228 |
2N2219 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 229 |
2N2219A |
0.800W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 35 hFE. |
Continental Device India Limited |
| 230 |
2N2221 |
0.500W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
| 231 |
2N2221A |
0.500W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 25 hFE. |
Continental Device India Limited |
| 232 |
2N2222 |
0.500W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 30 hFE. |
Continental Device India Limited |
| 233 |
2N2222A |
0.500W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 40 hFE. |
Continental Device India Limited |
| 234 |
2N2222AXCSM |
Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications |
SemeLAB |
| 235 |
2N2243A |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 236 |
2N2270 |
1.000W General Purpose NPN Metal Can Transistor. 45V Vceo, 1.000A Ic, 50 - 200 hFE. |
Continental Device India Limited |
| 237 |
2N2369 |
1.200W General Purpose NPN Metal Can Transistor. 15V Vceo, A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 238 |
2N2369A |
1.200W General Purpose NPN Metal Can Transistor. 15V Vceo, A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 239 |
2N23867 |
1.000W Power PNP Metal Can Transistor. 40V Vceo, 3.000A Ic, 40 - 200 hFE. |
Continental Device India Limited |
| 240 |
2N2432 |
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
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