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Datasheets for CE I

Datasheets found :: 9086
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No. Part Name Description Manufacturer
211 24LC22A The Microchip Technology Inc. 24LC22A is a 256 x 8-bit dual-mode Electrically Erasable PROM. This device is designed for use in applications requiring storage and serial transmission of configuration and control information. Two modes of o Microchip
212 24LC22A-I/P The Microchip Technology Inc. 24LC22A is a 256 x 8-bit dual-mode Electrically Erasable PROM. This device is designed for use in applications ... Microchip
213 24LC22A-I/SN The Microchip Technology Inc. 24LC22A is a 256 x 8-bit dual-mode Electrically Erasable PROM. This device is designed for use in applications ... Microchip
214 24LC22AT-I/SN The Microchip Technology Inc. 24LC22A is a 256 x 8-bit dual-mode Electrically Erasable PROM. This device is designed for use in applications ... Microchip
215 281 High CMV, High Performance Isolation Amplifiers Intronics
216 284J High CMV, High Performance Isolation Amplifiers Intronics
217 286J High CMV, High Performance Isolation Amplifiers Intronics
218 2N1613 0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 0.500A Ic, 20 hFE. Continental Device India Limited
219 2N1711 0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 40 hFE. Continental Device India Limited
220 2N1893 0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, 0.500A Ic, 20 hFE. Continental Device India Limited
221 2N1991 Bipolar PNP Device in a Hermetically sealed TO39 Metal Package SemeLAB
222 2N2102 1.000W RF NPN Metal Can Transistor. 65V Vceo, 1.000A Ic, 40 - 120 hFE. Continental Device India Limited
223 2N2194 Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. SemeLAB
224 2N2218 0.800W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 20 hFE. Continental Device India Limited
225 2N2218 Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. SemeLAB
226 2N2218A 0.800W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 20 hFE. Continental Device India Limited
227 2N2219 0.800W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 35 hFE. Continental Device India Limited
228 2N2219 Bipolar NPN Device in a Hermetically sealed TO39 Metal Package SemeLAB
229 2N2219A 0.800W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 35 hFE. Continental Device India Limited
230 2N2221 0.500W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 20 hFE. Continental Device India Limited
231 2N2221A 0.500W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 25 hFE. Continental Device India Limited
232 2N2222 0.500W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 30 hFE. Continental Device India Limited
233 2N2222A 0.500W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 40 hFE. Continental Device India Limited
234 2N2222AXCSM Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications SemeLAB
235 2N2243A Bipolar NPN Device in a Hermetically sealed TO39 Metal Package SemeLAB
236 2N2270 1.000W General Purpose NPN Metal Can Transistor. 45V Vceo, 1.000A Ic, 50 - 200 hFE. Continental Device India Limited
237 2N2369 1.200W General Purpose NPN Metal Can Transistor. 15V Vceo, A Ic, 40 - 120 hFE. Continental Device India Limited
238 2N2369A 1.200W General Purpose NPN Metal Can Transistor. 15V Vceo, A Ic, 40 - 120 hFE. Continental Device India Limited
239 2N23867 1.000W Power PNP Metal Can Transistor. 40V Vceo, 3.000A Ic, 40 - 200 hFE. Continental Device India Limited
240 2N2432 Bipolar NPN Device in a Hermetically sealed TO18 Metal Package SemeLAB


Datasheets found :: 9086
Page: | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 |



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