| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2N2484 |
0.360W General Purpose NPN Metal Can Transistor. 60V Vceo, 0.050A Ic, 250 hFE. |
Continental Device India Limited |
| 242 |
2N2845 |
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
| 243 |
2N2891 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 244 |
2N2894A |
Bipolar PNP Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
| 245 |
2N2895 |
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
| 246 |
2N2896 |
1.800W General Purpose NPN Metal Can Transistor. 90V Vceo, 1.000A Ic, 35 hFE. |
Continental Device India Limited |
| 247 |
2N2904 |
0.600W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.600A Ic, 20 hFE. |
Continental Device India Limited |
| 248 |
2N2904A |
0.600W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.600A Ic, 40 hFE. |
Continental Device India Limited |
| 249 |
2N2904A |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 250 |
2N2905 |
0.600W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.600A Ic, 30 hFE. |
Continental Device India Limited |
| 251 |
2N2905A |
0.600W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.600A Ic, 50 hFE. |
Continental Device India Limited |
| 252 |
2N2906 |
0.400W Switching PNP Metal Can Transistor. 40V Vceo, 0.600A Ic, 20 hFE. |
Continental Device India Limited |
| 253 |
2N2906A |
0.400W Switching PNP Metal Can Transistor. 60V Vceo, 0.600A Ic, 40 hFE. |
Continental Device India Limited |
| 254 |
2N2907 |
0.400W Switching PNP Metal Can Transistor. 40V Vceo, 0.600A Ic, 30 hFE. |
Continental Device India Limited |
| 255 |
2N2907 |
Bipolar PNP Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
| 256 |
2N2907A |
0.400W Switching PNP Metal Can Transistor. 60V Vceo, 0.600A Ic, 50 hFE. |
Continental Device India Limited |
| 257 |
2N2993 |
Bipolar NPN Device in a Hermetically sealed TO5 Metal Package |
SemeLAB |
| 258 |
2N3019 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, A Ic, 50 hFE. |
Continental Device India Limited |
| 259 |
2N3020 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, A Ic, 30 - 100 hFE. |
Continental Device India Limited |
| 260 |
2N3053 |
5.000W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.700A Ic, 50 - 250 hFE. |
Continental Device India Limited |
| 261 |
2N3053A |
7.000W General Purpose NPN Metal Can Transistor. 60V Vceo, 0.700A Ic, 25 hFE. |
Continental Device India Limited |
| 262 |
2N3055 |
115.000W Power NPN Metal Can Transistor. 60V Vceo, 15.000A Ic, 5 hFE. |
Continental Device India Limited |
| 263 |
2N3055HV |
90.000W Power NPN Metal Can Transistor. 100V Vceo, 15.000A Ic, 5 hFE. |
Continental Device India Limited |
| 264 |
2N3114CSM |
Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications |
SemeLAB |
| 265 |
2N3174 |
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 266 |
2N3202 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 267 |
2N322 |
PNP germanium transistor for audio driver and low power output service in entertainment equipment |
Motorola |
| 268 |
2N323 |
PNP germanium transistor for audio driver and low power output service in entertainment equipment |
Motorola |
| 269 |
2N324 |
PNP germanium transistor for audio driver and low power output service in entertainment equipment |
Motorola |
| 270 |
2N3244 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
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