No. |
Part Name |
Description |
Manufacturer |
211 |
AN202 |
Technical Consideration for Migrating CS5460-Based Design to CS5460A-Based Design |
Cirrus Logic |
212 |
AN253 |
POWER SUPPLY DESIGN BASICS |
SGS Thomson Microelectronics |
213 |
AN4003 |
PC POWER SUPPLY DESIGN WITH KA3511 |
Fairchild Semiconductor |
214 |
AN450 |
PC BASED DEVOLOPMENT SYSTEM CUTS DESIGN TIME OF SMART POWER IC APPLICATION |
SGS Thomson Microelectronics |
215 |
AN48 |
Design Notes for a 2-Pole Filter with Differential Input |
Cirrus Logic |
216 |
AN535 |
PHASE LOCKED LOOP DESIGN FUNDAMENTALS |
Motorola |
217 |
AN55 |
Design Notes for a 2-Pole Filter |
Cirrus Logic |
218 |
AN557 |
EASY DESIGN WITH L4970 |
SGS Thomson Microelectronics |
219 |
AN561 |
WIDE BAND DESIGN OF PULSED POWER UHF AMPLIFIERS |
SGS Thomson Microelectronics |
220 |
AN644 |
QuickChip Design Example 2 Low Power Silicon BJT LNA for 1.9GHz |
MAXIM - Dallas Semiconductor |
221 |
AN723 |
Design A High Performance Buck or Boost Converter with Si9165 |
Vishay |
222 |
AN726 |
Design High Frequency, Higher Power Converters with Si9166 |
Vishay |
223 |
AN727 |
High-Frequency, High-Efficiency Buck Converter Design for Multi-Cell Battery Configured Systems Using Si9167 |
Vishay |
224 |
AN733 |
Design Guidelines for the Low-Noise Low-Dropout Regulator-Si9182 |
Vishay |
225 |
AN734 |
Design Guidelines for the Low-Noise Low-Dropout Regulator-Si9181 |
Vishay |
226 |
AN735 |
Design A Low-Noise Low-Dropout Regulator with the Si9183 |
Vishay |
227 |
AN736 |
A Smart Regulator Design for Network Interface Cards Using the Si91860 |
Vishay |
228 |
AN80 |
Digital CCD Camera Design Guide |
Cirrus Logic |
229 |
AN841 |
ST6 - A CLOCK DESIGN USING THE ST6-REALIZER |
SGS Thomson Microelectronics |
230 |
APPLICATION-NOTE |
High Frequency small signal circuit design application note |
NEC |
231 |
BAR80 |
Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss) |
Siemens |
232 |
BAR81 |
Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
Siemens |
233 |
BAR81W |
Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
Siemens |
234 |
BB811 |
Silicon Variable Capacitance Diode (Frequency range up to 2 GHz; special design for use in TV-sat indoor units) |
Siemens |
235 |
BB831 |
Silicon Variable Capacitance Diode (Frequency range up to 2 GHz special design for use in TV-sat indoor units) |
Siemens |
236 |
BB833 |
Silicon Tuning Diode (Extented frequency range up to 2.5 GHz; special design for use in TV-SAT indoor units) |
Siemens |
237 |
BB835 |
Silicon Tuning Diode (Extended frequency range up to 2.8 Ghz ; special design for use in TV-sat indoor units) |
Siemens |
238 |
BB837 |
Silicon Tuning Diode (Extented frequency range up to 2.8 GHz special design for use in TV-sat indoor units) |
Siemens |
239 |
BCM94318E |
AirForce One Single-Chip 802.11g Transceiver Reference Design with BroadRange Technology |
Broadcom |
240 |
BQ34Z651 |
SBS 1.1 Compliant Gas Gauge with Impedance Track Technology design for low temperature environment |
Texas Instruments |
| | | |