| No. |
Part Name |
Description |
Manufacturer |
| 241 |
APPLICATION-NOTE |
High Frequency small signal circuit design application note |
NEC |
| 242 |
BAR80 |
Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss) |
Siemens |
| 243 |
BAR81 |
Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
Siemens |
| 244 |
BAR81W |
Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
Siemens |
| 245 |
BB811 |
Silicon Variable Capacitance Diode (Frequency range up to 2 GHz; special design for use in TV-sat indoor units) |
Siemens |
| 246 |
BB831 |
Silicon Variable Capacitance Diode (Frequency range up to 2 GHz special design for use in TV-sat indoor units) |
Siemens |
| 247 |
BB833 |
Silicon Tuning Diode (Extented frequency range up to 2.5 GHz; special design for use in TV-SAT indoor units) |
Siemens |
| 248 |
BB835 |
Silicon Tuning Diode (Extended frequency range up to 2.8 Ghz ; special design for use in TV-sat indoor units) |
Siemens |
| 249 |
BB837 |
Silicon Tuning Diode (Extented frequency range up to 2.8 GHz special design for use in TV-sat indoor units) |
Siemens |
| 250 |
BCM94318E |
AirForce One™ Single-Chip 802.11g Transceiver Reference Design with BroadRange™ Technology |
Broadcom |
| 251 |
BQ34Z651 |
SBS 1.1 Compliant Gas Gauge with Impedance Track Technology design for low temperature environment |
Texas Instruments |
| 252 |
BQ34Z651DBT |
SBS 1.1 Compliant Gas Gauge with Impedance Track Technology design for low temperature environment 44-TSSOP -40 to 85 |
Texas Instruments |
| 253 |
BQ34Z651DBTR |
SBS 1.1 Compliant Gas Gauge with Impedance Track Technology design for low temperature environment 44-TSSOP -40 to 85 |
Texas Instruments |
| 254 |
BQ500211A |
5V, Qi Compliant Wireless Power Transmitter Manager with Foreign Metal Object Detection |
Texas Instruments |
| 255 |
BQ500211ARGZR |
5V, Qi Compliant Wireless Power Transmitter Manager with Foreign Metal Object Detection 48-VQFN -40 to 110 |
Texas Instruments |
| 256 |
BQ500211ARGZT |
5V, Qi Compliant Wireless Power Transmitter Manager with Foreign Metal Object Detection 48-VQFN -40 to 110 |
Texas Instruments |
| 257 |
BUL49A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
SemeLAB |
| 258 |
BUL50A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
SemeLAB |
| 259 |
BUL52 |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
SemeLAB |
| 260 |
BUL52AFI |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
SemeLAB |
| 261 |
BUL52B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
SemeLAB |
| 262 |
BUL52BFI |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
SemeLAB |
| 263 |
BUL53A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
SemeLAB |
| 264 |
BUL53B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
SemeLAB |
| 265 |
BUL53BSMD |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR |
SemeLAB |
| 266 |
BUL54 |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
SemeLAB |
| 267 |
BUL54A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
SemeLAB |
| 268 |
BUL54AFI |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
SemeLAB |
| 269 |
BUL54ASMD |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
SemeLAB |
| 270 |
BUL54B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
SemeLAB |
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