| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2N6472 |
Silicon NPN Epitaxial-Base High-Power Transistor |
RCA Solid State |
| 212 |
2N6496 |
High-Current, High-Power, High-Speed Silicon NPN Power Transistor |
RCA Solid State |
| 213 |
2N6609 |
Silicon P-N-P epitaxial-base high-power transistor. -160V, 150W. |
General Electric Solid State |
| 214 |
2N6654 |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
| 215 |
2N6654/1 |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
| 216 |
2N6654/2 |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
| 217 |
2N6654/3 |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
| 218 |
2N6654/4 |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
| 219 |
2N6654A |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
| 220 |
2N6654B |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
| 221 |
2N6655 |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
| 222 |
2N6655/1 |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
| 223 |
2N6655/2 |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
| 224 |
2N6655/3 |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
| 225 |
2N6655/4 |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
| 226 |
2N6655A |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
| 227 |
2N6655B |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
| 228 |
2N6985 |
125W 30 to 400MHz controlled Q broadband push-pull RF Power Transistor NPN silicon |
Motorola |
| 229 |
2N6986 |
100W 30 to 500MHz controlled Q broadband push-pull RF Power Transistor NPN silicon |
Motorola |
| 230 |
2SC2318 |
Silicon NPN epitaxial planar high-power for CATV transistor |
TOSHIBA |
| 231 |
2SC3660 |
Class AB/C UHF 28V push-pull transistor (This datasheet of NEM060C69-28 is also the datasheet of 2SC3660, see the Electrical Characteristics table) |
NEC |
| 232 |
2SC3660A |
Class AB/C UHF 28V push-pull transistor (This datasheet of NEM080C69-28 is also the datasheet of 2SC3660A, see the Electrical Characteristics table) |
NEC |
| 233 |
2SC9013 |
1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION |
USHA India LTD |
| 234 |
2SD118 |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
| 235 |
2SD118-BL |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
| 236 |
2SD118-R |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
| 237 |
2SD118-Y |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
| 238 |
2SD119 |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
| 239 |
2SD119-BL |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
| 240 |
2SD119-R |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
| | | |
