No. |
Part Name |
Description |
Manufacturer |
151 |
2N6340 |
HIGH-POWER NPN SILICON TRANSISTORS |
Boca Semiconductor Corporation |
152 |
2N6340 |
25A 200W high-power NPN silicon transistor |
Motorola |
153 |
2N6341 |
HIGH-POWER NPN SILICON TRANSISTORS |
Boca Semiconductor Corporation |
154 |
2N6341 |
25A 200W high-power NPN silicon transistor |
Motorola |
155 |
2N6371 |
High-power silicon N-P-N transistor. 50V, 117W. |
General Electric Solid State |
156 |
2N6436 |
HIGH-POWER PNP SILICON TRANSISTORS |
Boca Semiconductor Corporation |
157 |
2N6437 |
HIGH-POWER PNP SILICON TRANSISTORS |
Boca Semiconductor Corporation |
158 |
2N6437-D |
High-Power PNP Silicon Transistors |
ON Semiconductor |
159 |
2N6438 |
HIGH-POWER PNP SILICON TRANSISTORS |
Boca Semiconductor Corporation |
160 |
2N6469 |
Epitaxial-base, silicon P-N-P high-power transistor. -50V, 125W. |
General Electric Solid State |
161 |
2N6609 |
Silicon P-N-P epitaxial-base high-power transistor. -160V, 150W. |
General Electric Solid State |
162 |
2N6654 |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
163 |
2N6654/1 |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
164 |
2N6654/2 |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
165 |
2N6654/3 |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
166 |
2N6654/4 |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
167 |
2N6654A |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
168 |
2N6654B |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
169 |
2N6655 |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
170 |
2N6655/1 |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
171 |
2N6655/2 |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
172 |
2N6655/3 |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
173 |
2N6655/4 |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
174 |
2N6655A |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
175 |
2N6655B |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
176 |
2N6985 |
125W 30 to 400MHz controlled Q broadband push-pull RF Power Transistor NPN silicon |
Motorola |
177 |
2N6986 |
100W 30 to 500MHz controlled Q broadband push-pull RF Power Transistor NPN silicon |
Motorola |
178 |
2SC2318 |
Silicon NPN epitaxial planar high-power for CATV transistor |
TOSHIBA |
179 |
2SC3660 |
Class AB/C UHF 28V push-pull transistor (This datasheet of NEM060C69-28 is also the datasheet of 2SC3660, see the Electrical Characteristics table) |
NEC |
180 |
2SC3660A |
Class AB/C UHF 28V push-pull transistor (This datasheet of NEM080C69-28 is also the datasheet of 2SC3660A, see the Electrical Characteristics table) |
NEC |
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