No. |
Part Name |
Description |
Manufacturer |
151 |
2N6469 |
Epitaxial-base, silicon P-N-P high-power transistor. -50V, 125W. |
General Electric Solid State |
152 |
2N6609 |
Silicon P-N-P epitaxial-base high-power transistor. -160V, 150W. |
General Electric Solid State |
153 |
2N6985 |
125W 30 to 400MHz controlled Q broadband push-pull RF Power Transistor NPN silicon |
Motorola |
154 |
2N6986 |
100W 30 to 500MHz controlled Q broadband push-pull RF Power Transistor NPN silicon |
Motorola |
155 |
2SC2318 |
Silicon NPN epitaxial planar high-power for CATV transistor |
TOSHIBA |
156 |
2SC3660 |
Class AB/C UHF 28V push-pull transistor (This datasheet of NEM060C69-28 is also the datasheet of 2SC3660, see the Electrical Characteristics table) |
NEC |
157 |
2SC3660A |
Class AB/C UHF 28V push-pull transistor (This datasheet of NEM080C69-28 is also the datasheet of 2SC3660A, see the Electrical Characteristics table) |
NEC |
158 |
2SC9013 |
1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION |
USHA India LTD |
159 |
2SD118 |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
160 |
2SD118-BL |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
161 |
2SD118-R |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
162 |
2SD118-Y |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
163 |
2SD119 |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
164 |
2SD119-BL |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
165 |
2SD119-R |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
166 |
2SD119-Y |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
167 |
2SD700 |
Silicon NPN triple diffused MESA darlington high-power switching transistor |
TOSHIBA |
168 |
2SD717 |
Silicon NPN triple diffused high-power switching transistor |
TOSHIBA |
169 |
2SD873 |
Silicon NPN triple diffused high-power transistor |
TOSHIBA |
170 |
40340 |
High-Power 50MHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
171 |
40341 |
High-Power 50MHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
172 |
40934 |
High-Power Silicon NPN VHF/UHF Transistor 12.5 Volt type for Class C amplifier applications |
RCA Solid State |
173 |
40940 |
5W, 400MHz Silicon NPN Overlay Transistor for VHF/UHF High-Power Amplifiers, Warning - device contains beryllium oxide |
RCA Solid State |
174 |
40972 |
175 MHz Silicon NPN Overlay Transistor for High-Power VHF Amplifiers |
RCA Solid State |
175 |
40973 |
175 MHz Silicon NPN Overlay Transistor for High-Power VHF Amplifiers |
RCA Solid State |
176 |
40974 |
175 MHz Silicon NPN Overlay Transistor for High-Power VHF Amplifiers |
RCA Solid State |
177 |
40975 |
118-136MHz Silicon NPN Overlay Transistor for High-Power VHF Amplifiers |
RCA Solid State |
178 |
40976 |
118-136MHz Silicon NPN Overlay Transistor for High-Power VHF Amplifiers |
RCA Solid State |
179 |
40977 |
118-136MHz Silicon NPN Overlay Transistor for High-Power VHF Amplifiers |
RCA Solid State |
180 |
5962-85155012A |
High-Performance Impact<TM> PAL<R> Circuits 20-LCCC -55 to 125 |
Texas Instruments |
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