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Datasheets for H-P

Datasheets found :: 14183
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No. Part Name Description Manufacturer
61 2N3950 NPN silicon RF power transistor designed for high-power RF amplifier applications Motorola
62 2N4012 High-Power Silicon NPN Overlay RF Transistor RCA Solid State
63 2N4347 HIGH-POWER INDUSTRIAL TRANSISTORS Boca Semiconductor Corporation
64 2N4347 High-Power industrial transistor Motorola
65 2N4398 PNP SILICON HIGH-POWER TRANSISTORS Boca Semiconductor Corporation
66 2N4398 High-power PNP silicon transistor, serves as direct replacements for germanium high-power devices Motorola
67 2N4398 High-power PNP silicon transistor, serves as direct replacements for germanium high-power devices Motorola
68 2N4399 PNP SILICON HIGH-POWER TRANSISTORS Boca Semiconductor Corporation
69 2N4399 High-power PNP silicon transistor, serves as direct replacements for germanium high-power devices Motorola
70 2N4399 High-power PNP silicon transistor, serves as direct replacements for germanium high-power devices Motorola
71 2N5016 High-Power Silicon NPN Overlay RF Transistor RCA Solid State
72 2N5090 High-Power Silicon NPN Overlay RF Transistor RCA Solid State
73 2N5102 High-Power Silicon NPN Overlay RF Transistor RCA Solid State
74 2N5301 High-power NPN silicon transistor Motorola
75 2N5302 High-power NPN silicon transistor Motorola
76 2N5302 High-Power NPN Silicon Transistor ON Semiconductor
77 2N5302-D High-Power NPN Silicon Transistor ON Semiconductor
78 2N5303 High-power NPN silicon transistor Motorola
79 2N5575 High-power general purpose NPN transistor, metal case IPRS Baneasa
80 2N5576 High-power general purpose NPN transistor, metal case IPRS Baneasa
81 2N5577 High-power general purpose NPN transistor, metal case IPRS Baneasa
82 2N5578 High-power general purpose NPN transistor, metal case IPRS Baneasa
83 2N5579 High-power general purpose NPN transistor, metal case IPRS Baneasa
84 2N5580 High-power general purpose NPN transistor, metal case IPRS Baneasa
85 2N5629 Silicon N-P-N epitaxial-base high-power transistor. 100V, 200W. General Electric Solid State
86 2N5630 Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. General Electric Solid State
87 2N5630 Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits Motorola
88 2N5631 Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W. General Electric Solid State
89 2N5631 Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits Motorola
90 2N5631 High-Voltage High-Power Transistors ON Semiconductor


Datasheets found :: 14183
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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