No. |
Part Name |
Description |
Manufacturer |
61 |
2N3950 |
NPN silicon RF power transistor designed for high-power RF amplifier applications |
Motorola |
62 |
2N4012 |
High-Power Silicon NPN Overlay RF Transistor |
RCA Solid State |
63 |
2N4347 |
HIGH-POWER INDUSTRIAL TRANSISTORS |
Boca Semiconductor Corporation |
64 |
2N4347 |
High-Power industrial transistor |
Motorola |
65 |
2N4398 |
PNP SILICON HIGH-POWER TRANSISTORS |
Boca Semiconductor Corporation |
66 |
2N4398 |
High-power PNP silicon transistor, serves as direct replacements for germanium high-power devices |
Motorola |
67 |
2N4398 |
High-power PNP silicon transistor, serves as direct replacements for germanium high-power devices |
Motorola |
68 |
2N4399 |
PNP SILICON HIGH-POWER TRANSISTORS |
Boca Semiconductor Corporation |
69 |
2N4399 |
High-power PNP silicon transistor, serves as direct replacements for germanium high-power devices |
Motorola |
70 |
2N4399 |
High-power PNP silicon transistor, serves as direct replacements for germanium high-power devices |
Motorola |
71 |
2N5016 |
High-Power Silicon NPN Overlay RF Transistor |
RCA Solid State |
72 |
2N5090 |
High-Power Silicon NPN Overlay RF Transistor |
RCA Solid State |
73 |
2N5102 |
High-Power Silicon NPN Overlay RF Transistor |
RCA Solid State |
74 |
2N5301 |
High-power NPN silicon transistor |
Motorola |
75 |
2N5302 |
High-power NPN silicon transistor |
Motorola |
76 |
2N5302 |
High-Power NPN Silicon Transistor |
ON Semiconductor |
77 |
2N5302-D |
High-Power NPN Silicon Transistor |
ON Semiconductor |
78 |
2N5303 |
High-power NPN silicon transistor |
Motorola |
79 |
2N5629 |
Silicon N-P-N epitaxial-base high-power transistor. 100V, 200W. |
General Electric Solid State |
80 |
2N5630 |
Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. |
General Electric Solid State |
81 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
82 |
2N5631 |
Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W. |
General Electric Solid State |
83 |
2N5631 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
84 |
2N5631 |
High-Voltage High-Power Transistors |
ON Semiconductor |
85 |
2N5632 |
10A complementary silicon high-voltage, high-power NPN transistor 150W |
Motorola |
86 |
2N5633 |
10A complementary silicon high-voltage, high-power NPN transistor 150W |
Motorola |
87 |
2N5634 |
10A complementary silicon high-voltage, high-power NPN transistor 150W |
Motorola |
88 |
2N5671 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
89 |
2N5672 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
90 |
2N5745 |
PNP SILICON HIGH-POWER TRANSISTORS |
Boca Semiconductor Corporation |
| | | |