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Datasheets for HZ

Datasheets found :: 36185
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No. Part Name Description Manufacturer
211 1920AB4 4 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
212 1920AB60 60 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
213 1920AB60 60 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
214 1920CD35 35 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
215 1920CD35 35 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
216 1920CD60 60 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
217 1920CD60 60 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
218 1922-18 1.9-2.2GHz 18W 24V NPN transistor for microwave telecommunication applications SGS Thomson Microelectronics
219 1N147 Germanium UHF Mixer f=900 MHz NF=10 to 9.0 dB Motorola
220 1N147A Germanium UHF Mixer f=900 MHz NF=10 to 9.0 dB Motorola
221 1N149 Silicon Microwave X-band Mixer: f=9,375 MHz NF=8.3 dB Motorola
222 1N150 Silicon Microwave C-band Mixer: f=6,750 MHz NF=9.8 dB Motorola
223 1N160 Silicon Microwave C-band Mixer: f=6,750 MHz NF=11.4 dB Motorola
224 1N173A Silicon UHF Mixer - to 1,000 MHz NF=13 dB Motorola
225 1N263 Germanium Microwave X-band Mixer f=9,375 MHz NF=7.5 dB Motorola
226 1N311 Microwave Mixer - to 12,000 MHz NF=10.5 dB Motorola
227 1N4940 Germanium Microwave Ka-band Mixer, f=9,375 MHz NF=6.5dB Motorola
228 1N5149 Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz Motorola
229 1N5149 Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz Motorola
230 1N5150 Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz Motorola
231 1N5150 Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz Motorola
232 1N53 Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB Motorola
233 1N53A Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB Motorola
234 1N53B Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB Motorola
235 1N53C Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB Motorola
236 1N53D Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB Motorola
237 1S1921A Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -200V Hitachi Semiconductor
238 1S1921B Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -400V Hitachi Semiconductor
239 1S1921C Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -600V Hitachi Semiconductor
240 1S1921D Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -800V Hitachi Semiconductor


Datasheets found :: 36185
Page: | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 |



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