No. |
Part Name |
Description |
Manufacturer |
211 |
1920AB4 |
4 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
212 |
1920AB60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
213 |
1920AB60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
214 |
1920CD35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
215 |
1920CD35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
216 |
1920CD60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
217 |
1920CD60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
218 |
1922-18 |
1.9-2.2GHz 18W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
219 |
1N147 |
Germanium UHF Mixer f=900 MHz NF=10 to 9.0 dB |
Motorola |
220 |
1N147A |
Germanium UHF Mixer f=900 MHz NF=10 to 9.0 dB |
Motorola |
221 |
1N149 |
Silicon Microwave X-band Mixer: f=9,375 MHz NF=8.3 dB |
Motorola |
222 |
1N150 |
Silicon Microwave C-band Mixer: f=6,750 MHz NF=9.8 dB |
Motorola |
223 |
1N160 |
Silicon Microwave C-band Mixer: f=6,750 MHz NF=11.4 dB |
Motorola |
224 |
1N173A |
Silicon UHF Mixer - to 1,000 MHz NF=13 dB |
Motorola |
225 |
1N263 |
Germanium Microwave X-band Mixer f=9,375 MHz NF=7.5 dB |
Motorola |
226 |
1N311 |
Microwave Mixer - to 12,000 MHz NF=10.5 dB |
Motorola |
227 |
1N4940 |
Germanium Microwave Ka-band Mixer, f=9,375 MHz NF=6.5dB |
Motorola |
228 |
1N5149 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
229 |
1N5149 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
230 |
1N5150 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
231 |
1N5150 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
232 |
1N53 |
Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB |
Motorola |
233 |
1N53A |
Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB |
Motorola |
234 |
1N53B |
Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB |
Motorola |
235 |
1N53C |
Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB |
Motorola |
236 |
1N53D |
Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB |
Motorola |
237 |
1S1921A |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -200V |
Hitachi Semiconductor |
238 |
1S1921B |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -400V |
Hitachi Semiconductor |
239 |
1S1921C |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -600V |
Hitachi Semiconductor |
240 |
1S1921D |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -800V |
Hitachi Semiconductor |
| | | |