| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2SC3355 |
Plastic Mold-Packeged low-noise microwave transistors for consumer microwave, application of 2SC3355 series - Application Note |
NEC |
| 212 |
2SC3355 |
Plastic Mold-Packeged low-noise microwave transistors for consumer microwave, application of 2SC3355 series - Application Note |
NEC |
| 213 |
2SC3439 |
FOR SMALL TYPE MOTOR PLUNGER DRIVE APPLICATION SILCON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 214 |
2SC3440 |
HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 215 |
2SC3443 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 216 |
2SC3444 |
FOR LOW FREQUENCY POWER AMPLFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 217 |
2SC366G |
Industrial Transistor Specification Table |
TOSHIBA |
| 218 |
2SC367G |
Industrial Transistor Specification Table |
TOSHIBA |
| 219 |
2SC368 |
Industrial Transistor Specification Table |
TOSHIBA |
| 220 |
2SC369G |
Industrial Transistor Specification Table |
TOSHIBA |
| 221 |
2SC370 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 222 |
2SC371 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 223 |
2SC371G |
Industrial Transistor Specification Table |
TOSHIBA |
| 224 |
2SC372 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 225 |
2SC3728 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 226 |
2SC372G |
Industrial Transistor Specification Table |
TOSHIBA |
| 227 |
2SC373G |
Industrial Transistor Specification Table |
TOSHIBA |
| 228 |
2SC380A |
Radio Frequency Transistor specification table |
TOSHIBA |
| 229 |
2SC381 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 230 |
2SC382 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 231 |
2SC383 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 232 |
2SC385A |
Radio Frequency Transistor specification table |
TOSHIBA |
| 233 |
2SC386A |
Radio Frequency Transistor specification table |
TOSHIBA |
| 234 |
2SC387A |
Radio Frequency Transistor specification table |
TOSHIBA |
| 235 |
2SC387A |
Industrial Transistor Specification Table |
TOSHIBA |
| 236 |
2SC388A |
Radio Frequency Transistor specification table |
TOSHIBA |
| 237 |
2SC390 |
Industrial Transistor Specification Table |
TOSHIBA |
| 238 |
2SC3906KFRA |
NPN General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
| 239 |
2SC3906KFRAT146 |
NPN General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
| 240 |
2SC3906KT146 |
NPN General Purpose Amplification Transistor |
ROHM |
| | | |
