| No. |
Part Name |
Description |
Manufacturer |
| 271 |
2SC506 |
Industrial Transistor Specification Table |
TOSHIBA |
| 272 |
2SC507 |
Industrial Transistor Specification Table |
TOSHIBA |
| 273 |
2SC510 |
Industrial Transistor Specification Table |
TOSHIBA |
| 274 |
2SC511 |
Industrial Transistor Specification Table |
TOSHIBA |
| 275 |
2SC512 |
Industrial Transistor Specification Table |
TOSHIBA |
| 276 |
2SC513 |
Industrial Transistor Specification Table |
TOSHIBA |
| 277 |
2SC5154 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATION DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 278 |
2SC517 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 279 |
2SC519A |
Industrial Transistor Specification Table |
TOSHIBA |
| 280 |
2SC5209 |
FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 281 |
2SC520A |
Industrial Transistor Specification Table |
TOSHIBA |
| 282 |
2SC5212 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 283 |
2SC5214 |
For Low Frequency Amplify Application Silicon Npn Epitaxial Type |
Isahaya Electronics Corporation |
| 284 |
2SC521A |
Industrial Transistor Specification Table |
TOSHIBA |
| 285 |
2SC522 |
Industrial Transistor Specification Table |
TOSHIBA |
| 286 |
2SC523 |
Industrial Transistor Specification Table |
TOSHIBA |
| 287 |
2SC524 |
Industrial Transistor Specification Table |
TOSHIBA |
| 288 |
2SC525 |
Industrial Transistor Specification Table |
TOSHIBA |
| 289 |
2SC5398 |
For Llow Frequency Amplifty Application Silicom NPN Epitaxial Type Micro(Frame type) |
Isahaya Electronics Corporation |
| 290 |
2SC5431-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 291 |
2SC5432-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 292 |
2SC5433-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 293 |
2SC5434-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 294 |
2SC5435-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 295 |
2SC5436-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 296 |
2SC5437-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 297 |
2SC547 |
Industrial Transistor Specification Table |
TOSHIBA |
| 298 |
2SC548 |
Industrial Transistor Specification Table |
TOSHIBA |
| 299 |
2SC5482 |
FOR LOW FREQUENCY POWER AMPLIFY APPRICATION SILICON NPN EPITAXIAL TYPE MICRO |
Isahaya Electronics Corporation |
| 300 |
2SC5485 |
FOR HIGH CURRENT APPLICATION SILICON NPN EPITAXIAL TYPE MICRO |
Isahaya Electronics Corporation |
| | | |
