No. |
Part Name |
Description |
Manufacturer |
211 |
MJE171 |
Trans GP BJT PNP 60V 3A 3-Pin TO-126 Box |
New Jersey Semiconductor |
212 |
MJE171 |
Power 3A 60V PNP |
ON Semiconductor |
213 |
MJE171 |
-80 V, -1 A, PNP epitaxial silicon transistor |
Samsung Electronic |
214 |
MJE171 |
Silicon PNP Power Transistors TO-126 package |
Savantic |
215 |
MJE171-D |
Complementary Plastic Silicon Power Transistors NPN |
ON Semiconductor |
216 |
MJE171STU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
217 |
MJE172 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
218 |
MJE172 |
12.500W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 50 - 250 hFE. |
Continental Device India Limited |
219 |
MJE172 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
220 |
MJE172 |
POWER TRANSISTORS(3.0A,40-80V,12.5W) |
MOSPEC Semiconductor |
221 |
MJE172 |
3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS |
Motorola |
222 |
MJE172 |
Trans GP BJT PNP 80V 3A 3-Pin TO-126 Box |
New Jersey Semiconductor |
223 |
MJE172 |
Power 3A 80V PNP |
ON Semiconductor |
224 |
MJE172 |
-100 V, -1 A, PNP epitaxial silicon transistor |
Samsung Electronic |
225 |
MJE172 |
Silicon PNP Power Transistors TO-126 package |
Savantic |
226 |
MJE172 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
SGS Thomson Microelectronics |
227 |
MJE172 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
SGS Thomson Microelectronics |
228 |
MJE172 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
ST Microelectronics |
229 |
MJE172STU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
230 |
MJE180 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
231 |
MJE180 |
12.500W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 3.000A Ic, 50 - 250 hFE. |
Continental Device India Limited |
232 |
MJE180 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
233 |
MJE180 |
POWER TRANSISTORS(3.0A,40-80V,12.5W) |
MOSPEC Semiconductor |
234 |
MJE180 |
3A Complementary plastic silicon NPN transistor 12.5W 40V |
Motorola |
235 |
MJE180 |
Trans GP BJT NPN 40V 3A 3-Pin TO-126 Box |
New Jersey Semiconductor |
236 |
MJE180 |
60 V, 3 A, NPN epitaxial silicon transistor |
Samsung Electronic |
237 |
MJE180 |
Silicon NPN Power Transistors TO-126 package |
Savantic |
238 |
MJE18002 |
POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTS |
Motorola |
239 |
MJE18002 |
Switchmode |
ON Semiconductor |
240 |
MJE18002 |
Silicon NPN Power Transistors TO-220 package |
Savantic |
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