| No. |
Part Name |
Description |
Manufacturer |
| 241 |
MJE18004 |
Switchmode™ |
ON Semiconductor |
| 242 |
MJE18004 |
Silicon NPN Power Transistors TO-220 package |
Savantic |
| 243 |
MJE18004-D |
SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications |
ON Semiconductor |
| 244 |
MJE18004D2 |
POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS |
Motorola |
| 245 |
MJE18004D2 |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ... |
ON Semiconductor |
| 246 |
MJE18004D2 |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ... |
ON Semiconductor |
| 247 |
MJE18004D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS |
ON Semiconductor |
| 248 |
MJE18006 |
POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTS |
Motorola |
| 249 |
MJE18006 |
Trans GP BJT NPN 450V 6A 3-Pin(3+Tab) TO-220AB Rail |
New Jersey Semiconductor |
| 250 |
MJE18006 |
Power 8A 450V NPN |
ON Semiconductor |
| 251 |
MJE18006 |
Silicon NPN Power Transistors TO-220C package |
Savantic |
| 252 |
MJE18006-D |
SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications |
ON Semiconductor |
| 253 |
MJE18008 |
POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTS |
Motorola |
| 254 |
MJE18008 |
Trans GP BJT NPN 450V 8A 3-Pin(3+Tab) TO-220AB Rail |
New Jersey Semiconductor |
| 255 |
MJE18008 |
SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications |
ON Semiconductor |
| 256 |
MJE18008 |
Silicon NPN Power Transistors TO-220C package |
Savantic |
| 257 |
MJE18008-D |
SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications |
ON Semiconductor |
| 258 |
MJE18009 |
POWER TRANSISTORS 10 AMPERES 1000 VOLTS 50 and 150 WATTS |
Motorola |
| 259 |
MJE18009-D |
SWITCHMODE NPN Silicon Planar Power Transistor |
ON Semiconductor |
| 260 |
MJE180STU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 261 |
MJE181 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 262 |
MJE181 |
12.500W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 50 - 250 hFE. |
Continental Device India Limited |
| 263 |
MJE181 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 264 |
MJE181 |
POWER TRANSISTORS(3.0A,40-80V,12.5W) |
MOSPEC Semiconductor |
| 265 |
MJE181 |
3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS |
Motorola |
| 266 |
MJE181 |
Trans GP BJT NPN 60V 3A 3-Pin TO-126 Box |
New Jersey Semiconductor |
| 267 |
MJE181 |
Power 3A 60V NPN |
ON Semiconductor |
| 268 |
MJE181 |
60 V, 3 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 269 |
MJE181 |
Silicon NPN Power Transistors TO-126 package |
Savantic |
| 270 |
MJE181STU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
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