| No. |
Part Name |
Description |
Manufacturer |
| 211 |
MTP33N10 |
TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM |
Motorola |
| 212 |
MTP33N10E |
TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM |
Motorola |
| 213 |
MTP33N10E |
SPP Power NChannel |
ON Semiconductor |
| 214 |
MTP33N10E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 215 |
MTP36N06 |
TMOS POWER FET 32 AMPERES 60 VOLTS RDS(on) = 0.04 OHM |
Motorola |
| 216 |
MTP36N06V |
TMOS POWER FET 32 AMPERES 60 VOLTS RDS(on) = 0.04 OHM |
Motorola |
| 217 |
MTP36N06V |
Power MOSFET 32 Amps, 60 Volts |
ON Semiconductor |
| 218 |
MTP36N06V-D |
Power MOSFET 32 Amps, 60 Volts N-Channel TO-220 |
ON Semiconductor |
| 219 |
MTP3N100 |
N-channel TMOS power FET. 1000 V, 3 A, Rds(on) 4 Ohm. |
Motorola |
| 220 |
MTP3N100E |
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM |
Motorola |
| 221 |
MTP3N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 222 |
MTP3N120E |
TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHM |
Motorola |
| 223 |
MTP3N120E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 224 |
MTP3N25E |
TMOS POWER FET 3.0 AMPERES 250 VOLTS RDS(on) = 1.4 OHM |
Motorola |
| 225 |
MTP3N35 |
N-Channel Power MOSFETs, 3.0 A, 350-400 V |
Fairchild Semiconductor |
| 226 |
MTP3N40 |
N-Channel Power MOSFETs, 3.0 A, 350-400 V |
Fairchild Semiconductor |
| 227 |
MTP3N50 |
TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS |
Motorola |
| 228 |
MTP3N50E |
TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS |
Motorola |
| 229 |
MTP3N50E |
3 Amp TO-220AB, N-Channel, VDSS 500 |
ON Semiconductor |
| 230 |
MTP3N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 231 |
MTP3N55 |
Trans MOSFET N-CH 500V 3A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 232 |
MTP3N60 |
Trans MOSFET N-CH 600V 3.9A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 233 |
MTP3N60 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 234 |
MTP3N60 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 235 |
MTP3N60 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 236 |
MTP3N60E |
TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS |
Motorola |
| 237 |
MTP3N60E |
Trans MOSFET N-CH 600V 3A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 238 |
MTP3N60E |
3 Amp TO-220AB, N-Channel, VDSS 600 |
ON Semiconductor |
| 239 |
MTP3N60E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 240 |
MTP3N60F1 |
Trans MOSFET N-CH 600V 2.5A 3-Pin(3+Tab) ISOWATT220 |
New Jersey Semiconductor |
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