No. |
Part Name |
Description |
Manufacturer |
241 |
MTP3N60FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
242 |
MTP3N60FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
243 |
MTP3N60FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
244 |
MTP40N10E |
TMOS POWER FET 40 AMPERES 100 VOLTS RDS(on) = 0.04 OHM |
Motorola |
245 |
MTP40N10E |
Power MOSFET 40 Amps, 100 Volts |
ON Semiconductor |
246 |
MTP40N10E-D |
Power MOSFET 40 Amps, 100 Volts N-Channel TO-220 |
ON Semiconductor |
247 |
MTP45N05E |
TMOS IV POWER FIELD EFFECT TRANSISTORS |
Motorola |
248 |
MTP4N08 |
N-Channel Power MOSFETs, 5.5 A, 60-100V |
Fairchild Semiconductor |
249 |
MTP4N08 |
Trans MOSFET N-CH 500V 4A 3-Pin(3+Tab) TO-220 Rail |
New Jersey Semiconductor |
250 |
MTP4N10 |
N-Channel Power MOSFETs, 5.5 A, 60-100V |
Fairchild Semiconductor |
251 |
MTP4N10 |
Trans MOSFET N-CH 500V 4A 3-Pin(3+Tab) TO-220 Rail |
New Jersey Semiconductor |
252 |
MTP4N40E |
TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM |
Motorola |
253 |
MTP4N40E |
OBSOLETE - 4 Amp TO-220AB, N-Channel, VDSS 400 |
ON Semiconductor |
254 |
MTP4N40E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
255 |
MTP4N45 |
N-Channel Power MOSFETs, 4.5 A, 450V/500V |
Fairchild Semiconductor |
256 |
MTP4N45 |
Trans MOSFET N-CH 450V 4A |
New Jersey Semiconductor |
257 |
MTP4N45M |
Trans MOSFET N-CH 450V 4A |
New Jersey Semiconductor |
258 |
MTP4N50 |
N-Channel Power MOSFETs, 4.5 A, 450V/500V |
Fairchild Semiconductor |
259 |
MTP4N50 |
Trans MOSFET N-CH 500V 4A |
New Jersey Semiconductor |
260 |
MTP4N50E |
TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS |
Motorola |
261 |
MTP4N50E |
Trans MOSFET N-CH 500V 4A 3-Pin(3+Tab) TO-220 Rail |
New Jersey Semiconductor |
262 |
MTP4N50E |
4 Amp TO-220AB, N-Channel, VDSS 500 |
ON Semiconductor |
263 |
MTP4N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
264 |
MTP4N60 |
Trans MOSFET N-CH 500V 4A 3-Pin(3+Tab) TO-220 Rail |
New Jersey Semiconductor |
265 |
MTP4N80 |
TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM |
Motorola |
266 |
MTP4N80E |
TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM |
Motorola |
267 |
MTP4N80E |
OBSOLETE - 4 Amp TO-220AB, N-Channel, VDSS 800 |
ON Semiconductor |
268 |
MTP4N80E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
269 |
MTP50N06 |
TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM |
Motorola |
270 |
MTP50N06 |
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM |
Motorola |
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