| No. |
Part Name |
Description |
Manufacturer |
| 211 |
1N5525C-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 212 |
1N5525CUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 213 |
1N5525CUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 214 |
1N5525D |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
| 215 |
1N5525D |
Diode Zener Single 6.2V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 216 |
1N5525D-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 217 |
1N5525D-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 218 |
1N5525DUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 219 |
1N5525DUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 220 |
1N5526 |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
| 221 |
1N5526 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 222 |
1N5526 |
Low Voltage Avalanche Zener |
Microsemi |
| 223 |
1N5526 |
Diode Zener Single 6.8V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 224 |
1N5526A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 6.8 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 225 |
1N5526A |
Low Voltage Avalanche Zener |
Microsemi |
| 226 |
1N5526A |
Diode Zener Single 6.8V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 227 |
1N5526A-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 228 |
1N5526A-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 229 |
1N5526AUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 230 |
1N5526AUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 231 |
1N5526B |
Leaded Zener Diode General Purpose |
Central Semiconductor |
| 232 |
1N5526B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 233 |
1N5526B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 6.8 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 234 |
1N5526B |
Low Voltage Avalanche Zener |
Microsemi |
| 235 |
1N5526B |
Low Voltage Avalanche Zener |
Microsemi |
| 236 |
1N5526B |
Diode Zener Single 6.8V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 237 |
1N5526B (DO35) |
Low Voltage Avalanche Zener |
Microsemi |
| 238 |
1N5526B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 239 |
1N5526B-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 240 |
1N5526B-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| | | |
