| No. |
Part Name |
Description |
Manufacturer |
| 331 |
1N5529 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 332 |
1N5529 |
Low Voltage Avalanche Zener |
Microsemi |
| 333 |
1N5529 |
Diode Zener Single 9.1V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 334 |
1N5529A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 335 |
1N5529A |
Low Voltage Avalanche Zener |
Microsemi |
| 336 |
1N5529A |
Diode Zener Single 9.1V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 337 |
1N5529A-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 338 |
1N5529A-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 339 |
1N5529AUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 340 |
1N5529AUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 341 |
1N5529B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 342 |
1N5529B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 343 |
1N5529B |
Low Voltage Avalanche Zener |
Microsemi |
| 344 |
1N5529B |
Low Voltage Avalanche Zener |
Microsemi |
| 345 |
1N5529B |
Diode Zener Single 9.1V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 346 |
1N5529B (DO35) |
Low Voltage Avalanche Zener |
Microsemi |
| 347 |
1N5529B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 348 |
1N5529B-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 349 |
1N5529B-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 350 |
1N5529BUR |
Zener Voltage Regulator Diode |
Microsemi |
| 351 |
1N5529BUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 352 |
1N5529BUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 353 |
1N5529C |
Leaded Zener Diode General Purpose |
Central Semiconductor |
| 354 |
1N5529C |
0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-2% tolerance. |
Jinan Gude Electronic Device |
| 355 |
1N5529C |
Diode Zener Single 9.1V 2% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 356 |
1N5529C-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 357 |
1N5529C-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 358 |
1N5529CUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 359 |
1N5529CUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 360 |
1N5529D |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
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