No. |
Part Name |
Description |
Manufacturer |
211 |
2N6754 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
212 |
2N6754 |
Trans GP BJT NPN 500V 10A |
New Jersey Semiconductor |
213 |
2N6754 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
214 |
2N6754 |
Bipolar NPN Device |
SemeLAB |
215 |
2N6755 |
N-Channel Power MOSFETs/ 14 A/ 60 A/100 V |
Fairchild Semiconductor |
216 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
217 |
2N6755 |
Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
218 |
2N6756 |
N-Channel Power MOSFETs/ 14 A/ 60 A/100 V |
Fairchild Semiconductor |
219 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
220 |
2N6756 |
100V Single N-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
221 |
2N6756 |
N-Channel |
Microsemi |
222 |
2N6756 |
Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
223 |
2N6756 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 14A |
Siliconix |
224 |
2N6756E3 |
N-Channel |
Microsemi |
225 |
2N6757 |
N-Channel Power MOSFETs/ 9A/ 150V/200V |
Fairchild Semiconductor |
226 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
227 |
2N6758 |
N-Channel Power MOSFETs/ 9A/ 150V/200V |
Fairchild Semiconductor |
228 |
2N6758 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
229 |
2N6758 |
200V Single N-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
230 |
2N6758 |
N-Channel |
Microsemi |
231 |
2N6758 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 9A |
Siliconix |
232 |
2N6758E3 |
N-Channel |
Microsemi |
233 |
2N6759 |
N-Channel Power MOSFETs/ 5.5A/ 350V/400V |
Fairchild Semiconductor |
234 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
235 |
2N6760 |
N-Channel Power MOSFETs/ 5.5A/ 350V/400V |
Fairchild Semiconductor |
236 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
237 |
2N6760 |
400V Single N-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
238 |
2N6760 |
N-Channel |
Microsemi |
239 |
2N6760 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 5.5A |
Siliconix |
240 |
2N6760E3 |
N-Channel |
Microsemi |
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