| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2N6761 |
N-Channel Power MOSFETs/ 4.5A/ 450V/500V |
Fairchild Semiconductor |
| 242 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 243 |
2N6762 |
N-Channel Power MOSFETs/ 4.5A/ 450V/500V |
Fairchild Semiconductor |
| 244 |
2N6762 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 245 |
2N6762 |
500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
| 246 |
2N6762 |
N-Channel |
Microsemi |
| 247 |
2N6762 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 4.5A |
Siliconix |
| 248 |
2N6762E3 |
N-Channel |
Microsemi |
| 249 |
2N6763 |
N-Channel Power MOSFETs/ 38A/ 60V/100V |
Fairchild Semiconductor |
| 250 |
2N6763 |
FET DEVICES WITH N_CHANNEL POLARITY |
New Jersey Semiconductor |
| 251 |
2N6764 |
N-Channel Power MOSFETs/ 38A/ 60V/100V |
Fairchild Semiconductor |
| 252 |
2N6764 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. |
General Electric Solid State |
| 253 |
2N6764 |
100V Single N-Channel Hi-Rel MOSFET in a TO-204AE package |
International Rectifier |
| 254 |
2N6764 |
N-Channel |
Microsemi |
| 255 |
2N6764 |
Trans MOSFET N-CH 100V 38A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 256 |
2N6764 |
N-channel enhancement mode MOSFET power transistor |
Omnirel |
| 257 |
2N6764 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 38A |
Siliconix |
| 258 |
2N6764E3 |
N-Channel |
Microsemi |
| 259 |
2N6764T1 |
N-Channel |
Microsemi |
| 260 |
2N6764T1E3 |
N-Channel |
Microsemi |
| 261 |
2N6765 |
N-Channel Power MOSFETs/ 30A/ 150V/200V |
Fairchild Semiconductor |
| 262 |
2N6765 |
FET DEVICES WITH N_CHANNEL POLARITY |
New Jersey Semiconductor |
| 263 |
2N6766 |
N-Channel Power MOSFETs/ 30A/ 150V/200V |
Fairchild Semiconductor |
| 264 |
2N6766 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
| 265 |
2N6766 |
200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package |
International Rectifier |
| 266 |
2N6766 |
N-Channel |
Microsemi |
| 267 |
2N6766 |
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-204AE |
New Jersey Semiconductor |
| 268 |
2N6766 |
N-channel enhancement mode MOSFET power transistor |
Omnirel |
| 269 |
2N6766 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 30A |
Siliconix |
| 270 |
2N6766BX5 |
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-204AE |
New Jersey Semiconductor |
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