No. |
Part Name |
Description |
Manufacturer |
211 |
IRF1018ESTRLPBF |
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
212 |
IRF1104 |
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
213 |
IRF1104L |
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
214 |
IRF1104LPBF |
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
215 |
IRF1104PBF |
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
216 |
IRF1104S |
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
217 |
IRF1104STRL |
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
218 |
IRF1104STRLPBF |
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
219 |
IRF1104STRR |
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
220 |
IRF120 |
N-Channel Power MOSFETs/ 11 A/ 60-100 V |
Fairchild Semiconductor |
221 |
IRF120 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A. |
General Electric Solid State |
222 |
IRF120 |
8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs |
Intersil |
223 |
IRF120 |
Trans MOSFET N-CH 100V 9.2A 3-Pin(2+Tab) TO-204AA |
New Jersey Semiconductor |
224 |
IRF120 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
225 |
IRF120-123 |
N-Channel Power MOSFETs/ 11 A/ 60-100 V |
Fairchild Semiconductor |
226 |
IRF121 |
N-Channel Power MOSFETs/ 11 A/ 60-100 V |
Fairchild Semiconductor |
227 |
IRF121 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 32A. |
General Electric Solid State |
228 |
IRF121 |
8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs |
Intersil |
229 |
IRF121 |
Trans MOSFET N-CH 80V 9.2A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
230 |
IRF121 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
231 |
IRF122 |
N-Channel Power MOSFETs/ 11 A/ 60-100 V |
Fairchild Semiconductor |
232 |
IRF122 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A. |
General Electric Solid State |
233 |
IRF122 |
8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs |
Intersil |
234 |
IRF122 |
Trans MOSFET N-CH 100V 9.2A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
235 |
IRF122 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
236 |
IRF123 |
N-Channel Power MOSFETs/ 11 A/ 60-100 V |
Fairchild Semiconductor |
237 |
IRF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 28A. |
General Electric Solid State |
238 |
IRF123 |
8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs |
Intersil |
239 |
IRF123 |
Trans MOSFET N-CH 80V 8A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
240 |
IRF123 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
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