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Datasheets for RF1

Datasheets found :: 1356
Page: | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 |
No. Part Name Description Manufacturer
211 IRF1018ESTRLPBF 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
212 IRF1104 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package International Rectifier
213 IRF1104L 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package International Rectifier
214 IRF1104LPBF 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package International Rectifier
215 IRF1104PBF 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package International Rectifier
216 IRF1104S 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
217 IRF1104STRL 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
218 IRF1104STRLPBF 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
219 IRF1104STRR 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
220 IRF120 N-Channel Power MOSFETs/ 11 A/ 60-100 V Fairchild Semiconductor
221 IRF120 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A. General Electric Solid State
222 IRF120 8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs Intersil
223 IRF120 Trans MOSFET N-CH 100V 9.2A 3-Pin(2+Tab) TO-204AA New Jersey Semiconductor
224 IRF120 N-CHANNEL POWER MOSFETS Samsung Electronic
225 IRF120-123 N-Channel Power MOSFETs/ 11 A/ 60-100 V Fairchild Semiconductor
226 IRF121 N-Channel Power MOSFETs/ 11 A/ 60-100 V Fairchild Semiconductor
227 IRF121 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 32A. General Electric Solid State
228 IRF121 8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs Intersil
229 IRF121 Trans MOSFET N-CH 80V 9.2A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
230 IRF121 N-CHANNEL POWER MOSFETS Samsung Electronic
231 IRF122 N-Channel Power MOSFETs/ 11 A/ 60-100 V Fairchild Semiconductor
232 IRF122 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A. General Electric Solid State
233 IRF122 8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs Intersil
234 IRF122 Trans MOSFET N-CH 100V 9.2A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
235 IRF122 N-CHANNEL POWER MOSFETS Samsung Electronic
236 IRF123 N-Channel Power MOSFETs/ 11 A/ 60-100 V Fairchild Semiconductor
237 IRF123 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 28A. General Electric Solid State
238 IRF123 8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs Intersil
239 IRF123 Trans MOSFET N-CH 80V 8A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
240 IRF123 N-CHANNEL POWER MOSFETS Samsung Electronic


Datasheets found :: 1356
Page: | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 |



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