No. |
Part Name |
Description |
Manufacturer |
271 |
IRF1312PBF |
80V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
272 |
IRF1312S |
80V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
273 |
IRF1312SPBF |
80V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
274 |
IRF1312STRL |
80V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
275 |
IRF1312STRLPBF |
80V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
276 |
IRF1312STRR |
80V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
277 |
IRF132 |
N-Channel Power MOSFETs/ 20 A/ 60-100 V |
Fairchild Semiconductor |
278 |
IRF132 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 48A. |
General Electric Solid State |
279 |
IRF132 |
12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs |
Intersil |
280 |
IRF132 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
281 |
IRF1324 |
24V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package |
International Rectifier |
282 |
IRF1324L |
24V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-262 package |
International Rectifier |
283 |
IRF1324LPBF |
24V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-262 package |
International Rectifier |
284 |
IRF1324PBF |
24V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package |
International Rectifier |
285 |
IRF1324S |
24V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package |
International Rectifier |
286 |
IRF1324S-7P |
24V Single N-Channel HEXFET Power MOSFET in a Lead Free 7-Lead D2-Pak package |
International Rectifier |
287 |
IRF1324STRL-7PP |
24V Single N-Channel HEXFET Power MOSFET in a Lead Free 7-Lead D2-Pak package |
International Rectifier |
288 |
IRF1324STRLPBF |
24V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package |
International Rectifier |
289 |
IRF133 |
N-Channel Power MOSFETs/ 20 A/ 60-100 V |
Fairchild Semiconductor |
290 |
IRF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 48A. |
General Electric Solid State |
291 |
IRF133 |
12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs |
Intersil |
292 |
IRF133 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
293 |
IRF140 |
N-Channel Power MOSFETs/ 27 A/ 60-100V |
Fairchild Semiconductor |
294 |
IRF140 |
100V Single N-Channel Hi-Rel MOSFET in a TO-204AE package |
International Rectifier |
295 |
IRF140 |
28A/ 100V/ 0.077 Ohm/ N-Channel Power MOSFET |
Intersil |
296 |
IRF140 |
Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
297 |
IRF140 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
298 |
IRF140 |
N-CHANNEL POWER MOSFET |
SemeLAB |
299 |
IRF140-143 |
N-Channel Power MOSFETs/ 27 A/ 60-100V |
Fairchild Semiconductor |
300 |
IRF1404 |
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
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