| No. |
Part Name |
Description |
Manufacturer |
| 391 |
IRF151 |
Trans MOSFET N-CH 80V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 392 |
IRF151 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 393 |
IRF151 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 40A |
Siliconix |
| 394 |
IRF152 |
N-Channel Power MOSFETs/ 40 A/ 60 V/100 V |
Fairchild Semiconductor |
| 395 |
IRF152 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 33A. |
General Electric Solid State |
| 396 |
IRF152 |
33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs |
Intersil |
| 397 |
IRF152 |
Trans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 398 |
IRF152 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 399 |
IRF152 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 33A |
Siliconix |
| 400 |
IRF152R |
Trans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 401 |
IRF153 |
N-Channel Power MOSFETs/ 40 A/ 60 V/100 V |
Fairchild Semiconductor |
| 402 |
IRF153 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 33A. |
General Electric Solid State |
| 403 |
IRF153 |
33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs |
Intersil |
| 404 |
IRF153 |
Trans MOSFET N-CH 80V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 405 |
IRF153 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 406 |
IRF153 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 33A |
Siliconix |
| 407 |
IRF153R |
Trans MOSFET N-CH 80V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 408 |
IRF1607 |
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 409 |
IRF1607PBF |
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 410 |
IRF1704 |
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A��) |
International Rectifier |
| 411 |
IRF1730G |
Power MOSFET(Vdss=400V/ Rds(on)=1.0ohm/ Id=3.7A) |
International Rectifier |
| 412 |
IRF1902 |
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 413 |
IRF1902TR |
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 414 |
IRF1902TRPBF |
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 415 |
IRF1902UPBF |
20V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market |
International Rectifier |
| 416 |
K4M64163PH-RF1L |
1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
Samsung Electronic |
| 417 |
K6T4016U3C-RF10 |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
| 418 |
K6T4016V3C-RF10 |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
| 419 |
MBRB10100CT |
MBR10H100CT / MBRF10H100CT & MBRB10H100CT Series |
Vaishali Semiconductor |
| 420 |
MBRB10H90CT |
MBR10H100CT / MBRF10H100CT & MBRB10H100CT Series |
Vaishali Semiconductor |
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