| No. |
Part Name |
Description |
Manufacturer |
| 2131 |
2N3807 |
Dual PNP silicon transistor designed for differential amplifier applications |
Motorola |
| 2132 |
2N3808 |
Dual PNP silicon transistor designed for differential amplifier applications |
Motorola |
| 2133 |
2N3809 |
Dual PNP silicon transistor designed for differential amplifier applications |
Motorola |
| 2134 |
2N3810 |
Dual PNP silicon transistor designed for differential amplifier applications |
Motorola |
| 2135 |
2N3810A |
Dual PNP silicon transistor designed for differential amplifier applications |
Motorola |
| 2136 |
2N3810DCSM |
DUAL HIGH GAIN PNP TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2137 |
2N3811 |
Dual PNP silicon transistor designed for differential amplifier applications |
Motorola |
| 2138 |
2N3811A |
Dual PNP silicon transistor designed for differential amplifier applications |
Motorola |
| 2139 |
2N3812 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-89 case |
Motorola |
| 2140 |
2N3813 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-89 case |
Motorola |
| 2141 |
2N3814 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-89 case |
Motorola |
| 2142 |
2N3815 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-89 case |
Motorola |
| 2143 |
2N3816 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-89 case |
Motorola |
| 2144 |
2N3816A |
Dual PNP silicon transistor designed for differential amplifier applications |
Motorola |
| 2145 |
2N3817 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-89 case |
Motorola |
| 2146 |
2N3817A |
Dual PNP silicon transistor designed for differential amplifier applications |
Motorola |
| 2147 |
2N3818 |
NPN silicon transistor for high-frequency power applications to 150 MHz |
Motorola |
| 2148 |
2N3821 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 2149 |
2N3822 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 2150 |
2N3823 |
Silicon N-channel junction field-effect transistor designed for VHF amplifier and mixer applications |
Motorola |
| 2151 |
2N3824 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 2152 |
2N3839 |
Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz, low noise |
SGS-ATES |
| 2153 |
2N3866 |
NPN silicon transistor, designed for amplifier, frequency-multiplier, or oscillator applications in military and industrial equipment |
Motorola |
| 2154 |
2N3866 |
Epitaxial planar NPN transistor designed for VHF-UHF class A, B or C amplifier circuits and oscillator applications |
SGS-ATES |
| 2155 |
2N3867 |
Planar transistor for switching applications |
SGS-ATES |
| 2156 |
2N3868 |
Planar transistor for switching applications |
SGS-ATES |
| 2157 |
2N3903 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 2158 |
2N3904 |
GENERAL PURPOSE NPN TRANSISTOR FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2159 |
2N3904 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 2160 |
2N3904CSM |
GENERAL PURPOSE NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
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