No. |
Part Name |
Description |
Manufacturer |
2041 |
2N3253 |
NPN silicon transistor for high-current saturated switching and core driver applications |
Motorola |
2042 |
2N3283 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
2043 |
2N3284 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
2044 |
2N3285 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
2045 |
2N3286 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
2046 |
2N3295 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
2047 |
2N3296 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
2048 |
2N3297 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
2049 |
2N3298 |
NPN silicon transistor for power oscillator applications to 150 MHz |
Motorola |
2050 |
2N3303 |
NPN silicon annular transistor designet for high-speed, high-current switching and driving applications |
Motorola |
2051 |
2N3323 |
PNP germanium transistor for FM RF, IF, mixer and oscillator and AM RF, IF and converter applications |
Motorola |
2052 |
2N3324 |
PNP germanium transistor for FM RF, IF, mixer and oscillator and AM RF, IF and converter applications |
Motorola |
2053 |
2N3325 |
PNP germanium transistor for FM RF, IF, mixer and oscillator and AM RF, IF and converter applications |
Motorola |
2054 |
2N3375 |
Silicon NPN overlay epitaxial planar transistor for VHF/UHF transmitting applications |
ICCE |
2055 |
2N3375 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
2056 |
2N3409 |
NPN silicon annular Star dual transistors for differential amplifiers applications |
Motorola |
2057 |
2N3410 |
NPN silicon annular Star dual transistors for differential amplifiers applications |
Motorola |
2058 |
2N3411 |
NPN silicon annular Star dual transistors for differential amplifiers applications |
Motorola |
2059 |
2N3418 |
Planar transistor for switching applications |
SGS-ATES |
2060 |
2N3419 |
Planar transistor for switching applications |
SGS-ATES |
2061 |
2N3420 |
Planar transistor for switching applications |
SGS-ATES |
2062 |
2N3421 |
Planar transistor for switching applications |
SGS-ATES |
2063 |
2N3439CSM4 |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
2064 |
2N3439CSM4R |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
2065 |
2N3440CSM4R |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
2066 |
2N3440S |
Silicon planar epitaxial NPN transistor intended for high voltage switching and linear amplifier applications |
SGS-ATES |
2067 |
2N3440S |
Planar transistor for switching applications |
SGS-ATES |
2068 |
2N3444 |
NPN silicon transistor for high-current saturated switching and core driver applications |
Motorola |
2069 |
2N3479 |
UNIJUNCTIONS TRANSISTOR |
CCSIT-CE |
2070 |
2N3480 |
UNIJUNCTIONS TRANSISTOR |
CCSIT-CE |
| | | |