| No. |
Part Name |
Description |
Manufacturer |
| 1921 |
2N2453 |
Dual NPN silicon transistor designed for differential amplifier applications |
Motorola |
| 1922 |
2N2453A |
Dual NPN silicon transistor designed for differential amplifier applications |
Motorola |
| 1923 |
2N2480 |
NPN silicon annular Star dual transistor matched pair for differential amplifiers and other applications |
Motorola |
| 1924 |
2N2480A |
NPN silicon annular Star dual transistor matched pair for differential amplifiers and other applications |
Motorola |
| 1925 |
2N2483 |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
| 1926 |
2N2484 |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
| 1927 |
2N2484CSM |
HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1928 |
2N2573 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 1929 |
2N2574 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 1930 |
2N2575 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 1931 |
2N2576 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 1932 |
2N2577 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 1933 |
2N2578 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 1934 |
2N2579 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 1935 |
2N2635 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 1936 |
2N2646 |
UNIJUNCTIONS TRANSISTOR |
CCSIT-CE |
| 1937 |
2N2647 |
UNIJUNCTIONS TRANSISTOR |
CCSIT-CE |
| 1938 |
2N2720 |
Dual NPN silicon transistors for differential amplifier applications |
Motorola |
| 1939 |
2N2721 |
Dual NPN silicon transistors for differential amplifier applications |
Motorola |
| 1940 |
2N2722 |
Dual NPN silicon transistor for differential amplifier applications |
Motorola |
| 1941 |
2N2800 |
PNP silicon annular transistor for medium-speed switching applications TO-5 case |
Motorola |
| 1942 |
2N2801 |
PNP silicon annular transistor for medium-speed switching applications TO-5 case |
Motorola |
| 1943 |
2N2802 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
| 1944 |
2N2803 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
| 1945 |
2N2804 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
| 1946 |
2N2805 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
| 1947 |
2N2806 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
| 1948 |
2N2807 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
| 1949 |
2N2815 |
Power transistor NPN Triple Diffused - Military applications |
SESCOSEM |
| 1950 |
2N2816 |
Power transistor NPN Triple Diffused - Military applications |
SESCOSEM |
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