| No. |
Part Name |
Description |
Manufacturer |
| 1891 |
2N2222 |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 1892 |
2N2222 |
NPN Silicon annular star transistor for high-speed switching and DC to UHF amplifier applications, 2N2907 PNP complementary |
Motorola |
| 1893 |
2N2222A |
Silicon transistor for switching applications |
IPRS Baneasa |
| 1894 |
2N2222A |
NPN silicon annular Star transistor for high-speed and switching and DC to VHF amplifier applications |
Motorola |
| 1895 |
2N2222ACSM |
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1896 |
2N2222ACSM4 |
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1897 |
2N2222ADCSM |
DUAL HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1898 |
2N2222AXCSM |
Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications |
SemeLAB |
| 1899 |
2N2223 |
NPN silicon annular Star dual transistor matched pair for differential amplifiers and other applications |
Motorola |
| 1900 |
2N2223A |
NPN silicon annular Star dual transistor matched pair for differential amplifiers and other applications |
Motorola |
| 1901 |
2N2224 |
NPN silicon annular transistor designed primarly for high speed switching applications |
Motorola |
| 1902 |
2N2242 |
NPN silicon annular transistor designed for high-speed, low-power saturated switching applications |
Motorola |
| 1903 |
2N2273 |
High-frequency germanium PNP transistor, designed for mlitary and high-reliability industrial as well as comercial VHF amplifier applications |
Motorola |
| 1904 |
2N2297 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 1905 |
2N2297 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
| 1906 |
2N2330 |
NPN silicon annular Star transistor for low-level DC/AC chopper applications |
Motorola |
| 1907 |
2N2331 |
NPN silicon annular Star transistor for low-level DC/AC chopper applications |
Motorola |
| 1908 |
2N2360 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
| 1909 |
2N2361 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
| 1910 |
2N2362 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
| 1911 |
2N2368 |
Silicon transistor for switching applications |
IPRS Baneasa |
| 1912 |
2N2369 |
Silicon transistor for switching applications |
IPRS Baneasa |
| 1913 |
2N2369 |
NPN silicon annular transistor for low-current, high-speed switching applications |
Motorola |
| 1914 |
2N2369A |
Silicon transistor for switching applications |
IPRS Baneasa |
| 1915 |
2N2369A |
NPN silicon epitaxial transistor for high-speed range of 10-100 mAdc switching applications |
Motorola |
| 1916 |
2N2369A1 |
HIGH SPEED / MEDIUM POWER / NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED TO-18 PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1917 |
2N2369ACSM |
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1918 |
2N2398 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
| 1919 |
2N2399 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
| 1920 |
2N2405 |
NPN silicon annular transistor designed for medium-power applications |
Motorola |
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