| No. |
Part Name |
Description |
Manufacturer |
| 1771 |
2N1707 |
PNP germanium transistor for audio driver applications in transistorized radio receivers |
Motorola |
| 1772 |
2N1708 |
NPN Silicon transistor designed for very high-speed, low-power saturated switching applications for computers in military and industrial service |
Motorola |
| 1773 |
2N1711 |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 1774 |
2N1711 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 1775 |
2N1711 |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
| 1776 |
2N1711 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
| 1777 |
2N1711A |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 1778 |
2N1724 |
NPN silicon power transistor designed for switching and aplifier applications |
Motorola |
| 1779 |
2N1724 |
NPN Triple Diffused - Military applications |
SESCOSEM |
| 1780 |
2N1724A |
NPN Triple Diffused - Military applications |
SESCOSEM |
| 1781 |
2N1725 |
NPN silicon power transistor designed for switching and aplifier applications |
Motorola |
| 1782 |
2N1725 |
NPN Triple Diffused - Military applications |
SESCOSEM |
| 1783 |
2N1742 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 1784 |
2N1742 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
| 1785 |
2N1743 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
| 1786 |
2N1744 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
| 1787 |
2N176 |
PNP germanium power transistor for economical power switching circuits and commercial grade power amplifier applications |
Motorola |
| 1788 |
2N178 |
PNP germanium power transistor for non-critical applications requiring economical components |
Motorola |
| 1789 |
2N1792 |
V(rrm/drm): 50V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1790 |
2N1793 |
V(rrm/drm): 100V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1791 |
2N1794 |
V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1792 |
2N1795 |
V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1793 |
2N1796 |
V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1794 |
2N1797 |
V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1795 |
2N1798 |
V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1796 |
2N1799 |
V(rrm/drm): 600V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1797 |
2N1805 |
V(rrm/drm): 600V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1798 |
2N1806 |
V(rrm/drm): 720V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1799 |
2N1807 |
V(rrm/drm): 840V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1800 |
2N1889 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
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