| No. |
Part Name |
Description |
Manufacturer |
| 1801 |
2N1890 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 1802 |
2N1893 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 1803 |
2N1893 |
NPN silicon annular transistor designed for medium-power applications |
Motorola |
| 1804 |
2N1893 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
| 1805 |
2N1909 |
V(rrm/drm): 25V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1806 |
2N1910 |
V(rrm/drm): 50V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1807 |
2N1911 |
V(rrm/drm): 100V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1808 |
2N1912 |
V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1809 |
2N1913 |
V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1810 |
2N1914 |
V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1811 |
2N1915 |
V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1812 |
2N1916 |
V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1813 |
2N1924 |
PNP germanium transistor for general purpose, low frequency applications |
Motorola |
| 1814 |
2N1925 |
PNP germanium transistor for general purpose, low frequency applications |
Motorola |
| 1815 |
2N1926 |
PNP germanium transistor for general purpose, low frequency applications |
Motorola |
| 1816 |
2N1936 |
Power transistor NPN Triple Diffused - Military applications |
SESCOSEM |
| 1817 |
2N1937 |
Power transistor NPN Triple Diffused - Military applications |
SESCOSEM |
| 1818 |
2N1991 |
PNP silicon annular transistor for medium-current switching applications |
Motorola |
| 1819 |
2N2023 |
V(rrm/drm): 25V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1820 |
2N2024 |
V(rrm/drm): 50V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1821 |
2N2025 |
V(rrm/drm): 100V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1822 |
2N2026 |
V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1823 |
2N2027 |
V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1824 |
2N2028 |
V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1825 |
2N2029 |
V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1826 |
2N2030 |
V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1827 |
2N2060 |
NPN silicon annular Star dual transistor matched pair for differential amplifiers and other applications |
Motorola |
| 1828 |
2N2060A |
NPN silicon annular Star dual transistor matched pair for differential amplifiers and other applications |
Motorola |
| 1829 |
2N2075 |
PNP germanium power transistor for high-power applications in high-reliability equipment |
Motorola |
| 1830 |
2N2075A |
PNP germanium power transistor for high-power applications in high-reliability equipment |
Motorola |
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