No. |
Part Name |
Description |
Manufacturer |
1951 |
2N2817 |
Power transistor NPN Triple Diffused - Military applications |
SESCOSEM |
1952 |
2N2818 |
Power transistor NPN Triple Diffused - Military applications |
SESCOSEM |
1953 |
2N2819 |
Power transistor NPN Triple Diffused - Military applications |
SESCOSEM |
1954 |
2N2820 |
Power transistor NPN Triple Diffused - Military applications |
SESCOSEM |
1955 |
2N2821 |
Power transistor NPN Triple Diffused - Military applications |
SESCOSEM |
1956 |
2N2822 |
Power transistor NPN Triple Diffused - Military applications |
SESCOSEM |
1957 |
2N2823 |
Power transistor NPN Triple Diffused - Military applications |
SESCOSEM |
1958 |
2N2824 |
Power transistor NPN Triple Diffused - Military applications |
SESCOSEM |
1959 |
2N2825 |
Power transistor NPN Triple Diffused - Military applications |
SESCOSEM |
1960 |
2N2837 |
PNP silicon annular transistor for medium-speed switching applications TO-18 case |
Motorola |
1961 |
2N2838 |
PNP silicon annular transistor for medium-speed switching applications TO-18 case |
Motorola |
1962 |
2N2845 |
NPN silicon annular transistor designed for switching applications |
Motorola |
1963 |
2N2846 |
NPN silicon annular transistor designed for switching applications |
Motorola |
1964 |
2N2847 |
NPN silicon annular transistor designed for switching applications |
Motorola |
1965 |
2N2848 |
NPN silicon annular transistor designed for switching applications |
Motorola |
1966 |
2N2857 |
Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz |
SGS-ATES |
1967 |
2N2857CSM |
HIGH FREQUENCY NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
1968 |
2N2894 |
PNP silicon annular transistor designed for switching applications |
Motorola |
1969 |
2N2894ACSM |
HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
1970 |
2N2894CSM |
HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
1971 |
2N2903 |
Dual NPN silicon transistors designed for differential amplifier applications |
Motorola |
1972 |
2N2903A |
Dual NPN silicon transistors designed for differential amplifier applications |
Motorola |
1973 |
2N2904 |
Silicon PNP epitaxial planar transistor for high speed switching applications and amplifier circuits |
AEG-TELEFUNKEN |
1974 |
2N2904 |
Silicon transistor for switching applications PNP |
IPRS Baneasa |
1975 |
2N2904 |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
1976 |
2N2904 |
PNP Silicon annular star transistor for high-speed switching and DC to UHF amplifier applications, 2N2218 NPN complementary |
Motorola |
1977 |
2N2904A |
Silicon PNP epitaxial planar transistor for high speed switching applications and amplifier circuits |
AEG-TELEFUNKEN |
1978 |
2N2904A |
Silicon transistor for switching applications PNP |
IPRS Baneasa |
1979 |
2N2904A |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
1980 |
2N2905 |
Silicon PNP epitaxial planar transistor for high speed switching applications and amplifier circuits |
AEG-TELEFUNKEN |
| | | |