| No. |
Part Name |
Description |
Manufacturer |
| 2161 |
2N1799 |
V(rrm/drm): 600V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 2162 |
2N1805 |
V(rrm/drm): 600V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 2163 |
2N1806 |
V(rrm/drm): 720V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 2164 |
2N1807 |
V(rrm/drm): 840V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 2165 |
2N1889 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 2166 |
2N1890 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 2167 |
2N1893 |
Silicon NPN planar transistor for high speed switchings |
AEG-TELEFUNKEN |
| 2168 |
2N1893 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 2169 |
2N1893 |
NPN silicon annular transistor designed for medium-power applications |
Motorola |
| 2170 |
2N1893 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
| 2171 |
2N1909 |
V(rrm/drm): 25V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 2172 |
2N1910 |
V(rrm/drm): 50V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 2173 |
2N1911 |
V(rrm/drm): 100V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 2174 |
2N1912 |
V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 2175 |
2N1913 |
V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 2176 |
2N1914 |
V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 2177 |
2N1915 |
V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 2178 |
2N1916 |
V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 2179 |
2N1917 |
PNP planar for alloy chopper replacements - silicon transistor |
Sprague |
| 2180 |
2N1918 |
PNP planar for alloy chopper replacements - silicon transistor |
Sprague |
| 2181 |
2N1919 |
PNP planar for alloy chopper replacements - silicon transistor |
Sprague |
| 2182 |
2N1920 |
PNP planar for alloy chopper replacements - silicon transistor |
Sprague |
| 2183 |
2N1921 |
PNP planar for alloy chopper replacements - silicon transistor |
Sprague |
| 2184 |
2N1922 |
PNP planar for alloy chopper replacements - silicon transistor |
Sprague |
| 2185 |
2N1924 |
PNP germanium transistor for general purpose, low frequency applications |
Motorola |
| 2186 |
2N1925 |
PNP germanium transistor for general purpose, low frequency applications |
Motorola |
| 2187 |
2N1926 |
PNP germanium transistor for general purpose, low frequency applications |
Motorola |
| 2188 |
2N1990 |
NPN silicon transistor designed for driving neon display tubes |
Motorola |
| 2189 |
2N1991 |
PNP silicon annular transistor for medium-current switching applications |
Motorola |
| 2190 |
2N2002 |
PNP planar for alloy chopper replacements - silicon transistor |
Sprague |
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