| No. |
Part Name |
Description |
Manufacturer |
| 2281 |
2N2221 |
NPN Silicon annular star transistor for high-speed switching and DC to UHF amplifier applications, 2N2906 PNP complementary |
Motorola |
| 2282 |
2N2221 |
NPN Silicon Planar Transistor for medium level switching |
Newmarket Transistors NKT |
| 2283 |
2N2221A |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
| 2284 |
2N2221A |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 2285 |
2N2221A |
NPN silicon annular Star transistor for high-speed and switching and DC to VHF amplifier applications |
Motorola |
| 2286 |
2N2221A |
NPN Silicon Planar Transistor for medium level switching |
Newmarket Transistors NKT |
| 2287 |
2N2222 |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
| 2288 |
2N2222 |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 2289 |
2N2222 |
NPN Silicon annular star transistor for high-speed switching and DC to UHF amplifier applications, 2N2907 PNP complementary |
Motorola |
| 2290 |
2N2222 |
NPN Silicon Planar Transistor for medium level switching |
Newmarket Transistors NKT |
| 2291 |
2N2222A |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
| 2292 |
2N2222A |
Silicon transistor for switching applications |
IPRS Baneasa |
| 2293 |
2N2222A |
NPN silicon annular Star transistor for high-speed and switching and DC to VHF amplifier applications |
Motorola |
| 2294 |
2N2222A |
NPN Silicon Planar Transistor for medium level switching |
Newmarket Transistors NKT |
| 2295 |
2N2222ACSM |
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2296 |
2N2222ACSM4 |
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2297 |
2N2222ADCSM |
DUAL HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2298 |
2N2222AXCSM |
Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications |
SemeLAB |
| 2299 |
2N2223 |
NPN silicon annular Star dual transistor matched pair for differential amplifiers and other applications |
Motorola |
| 2300 |
2N2223A |
NPN silicon annular Star dual transistor matched pair for differential amplifiers and other applications |
Motorola |
| 2301 |
2N2224 |
NPN silicon annular transistor designed primarly for high speed switching applications |
Motorola |
| 2302 |
2N2242 |
NPN silicon annular transistor designed for high-speed, low-power saturated switching applications |
Motorola |
| 2303 |
2N2273 |
High-frequency germanium PNP transistor, designed for mlitary and high-reliability industrial as well as comercial VHF amplifier applications |
Motorola |
| 2304 |
2N2297 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 2305 |
2N2297 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
| 2306 |
2N2322 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 2307 |
2N2323 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 2308 |
2N2324 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 2309 |
2N2325 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 2310 |
2N2326 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
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