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Datasheets for UT,

Datasheets found :: 21011
Page: | 70 | 71 | 72 | 73 | 74 | 75 | 76 | 77 | 78 |
No. Part Name Description Manufacturer
2191 KM416C1204CJL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh Samsung Electronic
2192 KM416C1204CT-45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
2193 KM416C1204CT-5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
2194 KM416C1204CT-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms Samsung Electronic
2195 KM416C1204CT-6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
2196 KM416C1204CT-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms Samsung Electronic
2197 KM416C1204CT-L45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
2198 KM416C1204CT-L5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
2199 KM416C1204CT-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
2200 KM416C1204CTL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh Samsung Electronic
2201 KM416C1204CTL-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh Samsung Electronic
2202 KM416C1204CTL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh Samsung Electronic
2203 KM416C254DJ-5 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, 8ms refresh period Samsung Electronic
2204 KM416C254DJ-6 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period Samsung Electronic
2205 KM416C254DJ-7 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period Samsung Electronic
2206 KM416C254DJL-5 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh Samsung Electronic
2207 KM416C254DJL-6 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh Samsung Electronic
2208 KM416C254DJL-7 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh Samsung Electronic
2209 KM416C254DT-5 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, 8ms refresh period Samsung Electronic
2210 KM416C254DT-6 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period Samsung Electronic
2211 KM416C254DT-7 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period Samsung Electronic
2212 KM416C254DTL-5 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh Samsung Electronic
2213 KM416C254DTL-6 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh Samsung Electronic
2214 KM416C254DTL-7 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh Samsung Electronic
2215 KM416C4004CS-5 4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 8K refresh, 50ns Samsung Electronic
2216 KM416C4004CS-6 4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 8K refresh, 60ns Samsung Electronic
2217 KM416C4104CS-5 4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 4K refresh, 50ns Samsung Electronic
2218 KM416C4104CS-6 4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 4K refresh, 60ns Samsung Electronic
2219 KM416V1004AJ-6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
2220 KM416V1004AJ-7 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Samsung Electronic


Datasheets found :: 21011
Page: | 70 | 71 | 72 | 73 | 74 | 75 | 76 | 77 | 78 |



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