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Datasheets for UT,

Datasheets found :: 21011
Page: | 73 | 74 | 75 | 76 | 77 | 78 | 79 | 80 | 81 |
No. Part Name Description Manufacturer
2281 KM416V1204BJ-L5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
2282 KM416V1204BJ-L6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
2283 KM416V1204BJ-L7 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Samsung Electronic
2284 KM416V1204BT-5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
2285 KM416V1204BT-6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
2286 KM416V1204BT-7 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Samsung Electronic
2287 KM416V1204BT-L5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
2288 KM416V1204BT-L6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
2289 KM416V1204BT-L7 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Samsung Electronic
2290 KM416V1204CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=16ms Samsung Electronic
2291 KM416V1204CJ-5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
2292 KM416V1204CJ-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=16ms Samsung Electronic
2293 KM416V1204CJ-6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
2294 KM416V1204CJ-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=16ms Samsung Electronic
2295 KM416V1204CJ-L5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
2296 KM416V1204CJ-L6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
2297 KM416V1204CJL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh Samsung Electronic
2298 KM416V1204CJL-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh Samsung Electronic
2299 KM416V1204CJL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh Samsung Electronic
2300 KM416V1204CT-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=16ms Samsung Electronic
2301 KM416V1204CT-5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
2302 KM416V1204CT-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=16ms Samsung Electronic
2303 KM416V1204CT-6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
2304 KM416V1204CT-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=16ms Samsung Electronic
2305 KM416V1204CT-L5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
2306 KM416V1204CT-L6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
2307 KM416V1204CTL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh Samsung Electronic
2308 KM416V1204CTL-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh Samsung Electronic
2309 KM416V1204CTL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh Samsung Electronic
2310 KM416V254DJ-5 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period Samsung Electronic


Datasheets found :: 21011
Page: | 73 | 74 | 75 | 76 | 77 | 78 | 79 | 80 | 81 |



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