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Datasheets for AXI

Datasheets found :: 103540
Page: | 71 | 72 | 73 | 74 | 75 | 76 | 77 | 78 | 79 |
No. Part Name Description Manufacturer
2221 2N6288 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
2222 2N6288 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. General Electric Solid State
2223 2N6288 Epitaxial-base silicon NPN transistor in Jedec TO-220 plastic package SGS-ATES
2224 2N6289 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
2225 2N6289 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. General Electric Solid State
2226 2N6290 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
2227 2N6290 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. General Electric Solid State
2228 2N6290 Epitaxial-base silicon NPN transistor in Jedec TO-220 plastic package SGS-ATES
2229 2N6291 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
2230 2N6291 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. General Electric Solid State
2231 2N6292 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
2232 2N6292 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. General Electric Solid State
2233 2N6292 Epitaxial-base silicon NPN transistor in Jedec TO-220 plastic package SGS-ATES
2234 2N6293 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
2235 2N6293 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. General Electric Solid State
2236 2N6303 Silicon epitaxial planar PNP transistor in Jedec TO-39 metal case SGS-ATES
2237 2N6354 Silicon planar multiepitaxial NPN transistor SGS-ATES
2238 2N6386 Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration SGS-ATES
2239 2N6387 Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration SGS-ATES
2240 2N6388 Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration SGS-ATES
2241 2N6427 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR Samsung Electronic
2242 2N6428 NPN EPITAXIAL SILICON TRANSISTOR Samsung Electronic
2243 2N6428A NPN EPITAXIAL SILICON TRANSISTOR Samsung Electronic
2244 2N6469 Epitaxial-base, silicon P-N-P high-power transistor. -50V, 125W. General Electric Solid State
2245 2N6473 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
2246 2N6473 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 110V. General Electric Solid State
2247 2N6474 130 V, epitaxial-base NPN selicon versawatt transistor Boca Semiconductor Corporation
2248 2N6474 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 130V. General Electric Solid State
2249 2N6475 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
2250 2N6475 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -110V. General Electric Solid State


Datasheets found :: 103540
Page: | 71 | 72 | 73 | 74 | 75 | 76 | 77 | 78 | 79 |



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