| No. |
Part Name |
Description |
Manufacturer |
| 2341 |
2N929 |
SEPT® NPN planar epitaxial low noise transistor |
Sprague |
| 2342 |
2N930 |
Silicon NPN Epitaxial Planar AF Transistor |
AEG-TELEFUNKEN |
| 2343 |
2N930 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
| 2344 |
2N930 |
Silicon NPN Epitaxial-Planar AF Transistor |
IPRS Baneasa |
| 2345 |
2N930 |
SEPT® NPN planar epitaxial low noise transistor |
Sprague |
| 2346 |
2N960 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
| 2347 |
2N961 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
| 2348 |
2N962 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
| 2349 |
2N963 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 2350 |
2N964 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
| 2351 |
2N964A |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 2352 |
2N965 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
| 2353 |
2N966 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
| 2354 |
2N967 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 2355 |
2N985 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 2356 |
2SA0564 |
Transistor - Silicon PNP Epitaxial Planar Type |
Panasonic |
| 2357 |
2SA0564A |
Transistor - Silicon PNP Epitaxial Planar Type |
Panasonic |
| 2358 |
2SA0699 |
Power Transistor - Silicon PNP Epitaxial Planar Type - Power Amplifier - Complementary Pair with 2SC1226, 2SC1226A |
Panasonic |
| 2359 |
2SA0699A |
Power Transistor - Silicon PNP Epitaxial Planar Type - Power Amplifier - Complementary Pair with 2SC1226, 2SC1226A |
Panasonic |
| 2360 |
2SA0748 |
Power Transistor - Silicon PNP Epitaxial Planar Type |
Panasonic |
| 2361 |
2SA1006 |
PNP/NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 2362 |
2SA1006A |
PNP/NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 2363 |
2SA1006B |
PNP/NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 2364 |
2SA1007 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 2365 |
2SA1007A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 2366 |
2SA1011 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 2367 |
2SA1012 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
| 2368 |
2SA1013 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) COLOR TV VERT. DEFLECTION OUTPUT, COLOR TV CLASS B SOUND OUTPUT APPLICATIONS |
TOSHIBA |
| 2369 |
2SA1015 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 2370 |
2SA1015(L) |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
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