| No. |
Part Name |
Description |
Manufacturer |
| 2281 |
2SA1007 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 2282 |
2SA1007A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 2283 |
2SA1090 |
Silicon PNP epitaxial transistor (PCT Process) for industrial applications |
TOSHIBA |
| 2284 |
2SA1094 |
Silicon PNP epitaxial transistor, for power amplifier applications |
TOSHIBA |
| 2285 |
2SA12 |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
| 2286 |
2SA1220 |
PNP silicon transistor for audio frequency and high frequency power amplifier applications |
NEC |
| 2287 |
2SA1220A |
PNP silicon transistor for audio frequency and high frequency power amplifier applications |
NEC |
| 2288 |
2SA1221 |
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |
NEC |
| 2289 |
2SA1222 |
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |
NEC |
| 2290 |
2SA1258 |
60V/3A for High-Speed Drivers Applications |
SANYO |
| 2291 |
2SA1259 |
60V/5A for High-Speed Drivers Applications |
SANYO |
| 2292 |
2SA1282 |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 2293 |
2SA1282A |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 2294 |
2SA1285 |
FOR PRE-DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 2295 |
2SA1285A |
FOR PRE-DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 2296 |
2SA1287 |
FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 2297 |
2SA12H |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
| 2298 |
2SA1306B |
1.5 A; 200V; 20W; silicon PNP epitaxial type stransistor. For power amplifier applications, driver stage amplifier applications |
TOSHIBA |
| 2299 |
2SA1316 |
Transistor Silicon PNP Epitaxial Type (PCT process) For Low Noise Audio Amplifier Applications and Recommended for the First Stages of MC Head Amplifiers |
TOSHIBA |
| 2300 |
2SA1316 |
Transistor Silicon PNP Epitaxial Type (PCT process) For Low Noise Audio Amplifier Applications and Recommended for the First Stages of MC Head Amplifiers |
TOSHIBA |
| 2301 |
2SA1318R |
PNP transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 2302 |
2SA1318S |
PNP transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 2303 |
2SA1318T |
PNP transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 2304 |
2SA1318U |
PNP transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 2305 |
2SA1342 |
SILICON PNP/NPN EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING APPLICATIONS |
SANYO |
| 2306 |
2SA1349 |
TRANSISTOR (LOW NOISE AUDIO AMPLIFIER APPLICATIONS. RECOMMENDED FOR CASCADE/ CURRENT MIRROR CIRCUIT APPLICATIONS OF THE FIRST STAGES OF PRE/ MAIN AMPL |
TOSHIBA |
| 2307 |
2SA1365 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 2308 |
2SA1369 |
FOR SMALL TYPE MOTOR, PLUNGER DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 2309 |
2SA1479 |
PNP Bipolar Transistor for CRT, Video Output Driver Applications |
ON Semiconductor |
| 2310 |
2SA1495 |
For high-speed switching |
Panasonic |
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