| No. |
Part Name |
Description |
Manufacturer |
| 2341 |
2SA1945 |
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 2342 |
2SA1947 |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 2343 |
2SA1964 |
For audio amplifier output stages/TV velocity modulation (-160V/ -1.5A) |
ROHM |
| 2344 |
2SA1977-L |
Transistor for amplifying PNP micro wave |
NEC |
| 2345 |
2SA1977-T1 |
Transistor for amplifying PNP micro wave |
NEC |
| 2346 |
2SA1977-T1B |
Transistor for amplifying PNP micro wave |
NEC |
| 2347 |
2SA1989 |
For Low Frequency Amplify Application Silicon PNP Epitaxial Type Uitra Super Nini |
Isahaya Electronics Corporation |
| 2348 |
2SA1993 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE MICRO |
Isahaya Electronics Corporation |
| 2349 |
2SA2034 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 2350 |
2SA2120 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 2351 |
2SA2121 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 2352 |
2SA2142 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 2353 |
2SA2154CT |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 2354 |
2SA2154MFV |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 2355 |
2SA2183 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 2356 |
2SA2184 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 2357 |
2SA2195 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 2358 |
2SA2214 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 2359 |
2SA2215 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 2360 |
2SA2220 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 2361 |
2SA234 |
Germanium Transistor PNP MESA, intended for use in FM Intermediate Frequency Amplifier, SW Frequency Converter |
Hitachi Semiconductor |
| 2362 |
2SA235 |
Germanium Transistor PNP MESA, intended for use in FM RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
| 2363 |
2SA3331R |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 2364 |
2SA3331S |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 2365 |
2SA3331T |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 2366 |
2SA3331U |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 2367 |
2SA3331V |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 2368 |
2SA350 |
Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier |
Hitachi Semiconductor |
| 2369 |
2SA351 |
Germanium PNP Transistor Drift Junction, intended for use in SW Oscillator, Frequency Converter |
Hitachi Semiconductor |
| 2370 |
2SA352 |
Germanium PNP Transistor Drift Junction, intended for use in SW Mixer |
Hitachi Semiconductor |
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