No. |
Part Name |
Description |
Manufacturer |
2311 |
IC61SP12836-150TQ |
150MHz; 3.3V; 128K x 36 synchronous pipelined static RAM |
ICSI |
2312 |
IC61SP12836-166B |
166MHz; 3.3V; 128K x 36 synchronous pipelined static RAM |
ICSI |
2313 |
IC61SP12836-166TQ |
166MHz; 3.3V; 128K x 36 synchronous pipelined static RAM |
ICSI |
2314 |
IC61SP12836-5B |
100MHz; 3.3V; 128K x 36 synchronous pipelined static RAM |
ICSI |
2315 |
IC61SP12836-5TQ |
100MHz; 3.3V; 128K x 36 synchronous pipelined static RAM |
ICSI |
2316 |
ICAN-6182 |
Features and Applications of RCA Integrated-Circuit Zero-Voltage Switches |
RCA Solid State |
2317 |
ICL7605 |
High Reliability Commutating Auto-Zero Instrumentaion Amplifier |
General Electric Solid State |
2318 |
ICL8007 |
High Reliability JFET Input Operational Amplifier |
General Electric Solid State |
2319 |
ICL8022 |
(ICL8021/ICL8023) Low Power Bipolar Operational Amplifier |
General Electric Solid State |
2320 |
IL356 |
HIGH VOLTAGE SOLID STATE RELA OPTOCOUPLER |
Siemens |
2321 |
IRF120 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A. |
General Electric Solid State |
2322 |
IRF121 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 32A. |
General Electric Solid State |
2323 |
IRF122 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A. |
General Electric Solid State |
2324 |
IRF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 28A. |
General Electric Solid State |
2325 |
IRF130 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 56A. |
General Electric Solid State |
2326 |
IRF131 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 56A. |
General Electric Solid State |
2327 |
IRF132 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 48A. |
General Electric Solid State |
2328 |
IRF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 48A. |
General Electric Solid State |
2329 |
IRF150 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 40A. |
General Electric Solid State |
2330 |
IRF151 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 40A. |
General Electric Solid State |
2331 |
IRF152 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 33A. |
General Electric Solid State |
2332 |
IRF153 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 33A. |
General Electric Solid State |
2333 |
IRF220 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
2334 |
IRF221 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
2335 |
IRF222 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
2336 |
IRF223 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
2337 |
IRF230 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
2338 |
IRF231 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
2339 |
IRF232 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
2340 |
IRF233 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
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