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Datasheets for D STA

Datasheets found :: 5692
Page: | 74 | 75 | 76 | 77 | 78 | 79 | 80 | 81 | 82 |
No. Part Name Description Manufacturer
2311 IC61SP12836-150TQ 150MHz; 3.3V; 128K x 36 synchronous pipelined static RAM ICSI
2312 IC61SP12836-166B 166MHz; 3.3V; 128K x 36 synchronous pipelined static RAM ICSI
2313 IC61SP12836-166TQ 166MHz; 3.3V; 128K x 36 synchronous pipelined static RAM ICSI
2314 IC61SP12836-5B 100MHz; 3.3V; 128K x 36 synchronous pipelined static RAM ICSI
2315 IC61SP12836-5TQ 100MHz; 3.3V; 128K x 36 synchronous pipelined static RAM ICSI
2316 ICAN-6182 Features and Applications of RCA Integrated-Circuit Zero-Voltage Switches RCA Solid State
2317 ICL7605 High Reliability Commutating Auto-Zero Instrumentaion Amplifier General Electric Solid State
2318 ICL8007 High Reliability JFET Input Operational Amplifier General Electric Solid State
2319 ICL8022 (ICL8021/ICL8023) Low Power Bipolar Operational Amplifier General Electric Solid State
2320 IL356 HIGH VOLTAGE SOLID STATE RELA OPTOCOUPLER Siemens
2321 IRF120 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A. General Electric Solid State
2322 IRF121 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 32A. General Electric Solid State
2323 IRF122 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A. General Electric Solid State
2324 IRF123 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 28A. General Electric Solid State
2325 IRF130 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 56A. General Electric Solid State
2326 IRF131 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 56A. General Electric Solid State
2327 IRF132 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 48A. General Electric Solid State
2328 IRF133 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 48A. General Electric Solid State
2329 IRF150 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 40A. General Electric Solid State
2330 IRF151 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 40A. General Electric Solid State
2331 IRF152 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 33A. General Electric Solid State
2332 IRF153 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 33A. General Electric Solid State
2333 IRF220 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. General Electric Solid State
2334 IRF221 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. General Electric Solid State
2335 IRF222 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
2336 IRF223 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
2337 IRF230 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
2338 IRF231 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
2339 IRF232 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
2340 IRF233 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State


Datasheets found :: 5692
Page: | 74 | 75 | 76 | 77 | 78 | 79 | 80 | 81 | 82 |



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