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Datasheets for D STA

Datasheets found :: 5692
Page: | 77 | 78 | 79 | 80 | 81 | 82 | 83 | 84 | 85 |
No. Part Name Description Manufacturer
2401 IRF820 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
2402 IRF821 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
2403 IRF822 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
2404 IRF823 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
2405 IRF830 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
2406 IRF831 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
2407 IRF832 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
2408 IRF833 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
2409 IRFD112 Power MOSFET field effect power transistor. General Electric Solid State
2410 IRFD113 Power MOSFET field effect power transistor. General Electric Solid State
2411 IRFF110 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.5A. General Electric Solid State
2412 IRFF111 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A. General Electric Solid State
2413 IRFF112 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A. General Electric Solid State
2414 IRFF113 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A. General Electric Solid State
2415 IRFF120 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 6.0A. General Electric Solid State
2416 IRFF121 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. General Electric Solid State
2417 IRFF122 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. General Electric Solid State
2418 IRFF123 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A. General Electric Solid State
2419 IRFF130 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 8.0A. General Electric Solid State
2420 IRFF131 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A. General Electric Solid State
2421 IRFF132 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A. General Electric Solid State
2422 IRFF133 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A. General Electric Solid State
2423 IRFF310 Power MOSFET field effect power transistor. Drain-source voltage 400 V. General Electric Solid State
2424 IRFF311 Power MOSFET field effect power transistor. Drain-source voltage 350 V. General Electric Solid State
2425 IRFF312 Power MOSFET field effect power transistor. Drain-source voltage 400 V. General Electric Solid State
2426 IRFF313 Power MOSFET field effect power transistor. Drain-source voltage 350 V. General Electric Solid State
2427 IRS21571DSPBF Fully integrated, fully protected 600V ballast control IC designed to drive virtually all types of rapid start fluorescent lamp ballasts. International Rectifier
2428 IS61C632A-4PQ 4ns; 125 MHz; 32 x 32 synchronous pipelined static RAM ICSI
2429 IS61C632A-4PQ 32K x 32 synchronous pipelined static RAM Integrated Silicon Solution Inc
2430 IS61C632A-4TQ 4ns; 125 MHz; 32 x 32 synchronous pipelined static RAM ICSI


Datasheets found :: 5692
Page: | 77 | 78 | 79 | 80 | 81 | 82 | 83 | 84 | 85 |



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