| No. |
Part Name |
Description |
Manufacturer |
| 2341 |
FS0802BI |
200 V, 200 mA sensitive gate SCR |
Fagor |
| 2342 |
FS0802DH |
400 V, 200 mA sensitive gate SCR |
Fagor |
| 2343 |
FS0802DI |
400 V, 200 mA sensitive gate SCR |
Fagor |
| 2344 |
FS0802MH |
600 V, 200 mA sensitive gate SCR |
Fagor |
| 2345 |
FS0802MI |
600 V, 200 mA sensitive gate SCR |
Fagor |
| 2346 |
FS351 |
Single 5-input NOR/OR gate (positive logic) |
AEG-TELEFUNKEN |
| 2347 |
FS356 |
Single expandable 3-input NOR/OR gate (positive logic) |
AEG-TELEFUNKEN |
| 2348 |
FS357 |
Single 3-input NOR/OR gate (positive logic) with 2 pin for expander circuit FNH 141 |
AEG-TELEFUNKEN |
| 2349 |
FS360 |
Dual 2-input NOR gate (positive logic) |
AEG-TELEFUNKEN |
| 2350 |
FS361 |
Dual 2-input NOR gate (positive Logic) |
AEG-TELEFUNKEN |
| 2351 |
G1000L |
Anode-Shorted Gate Turn-Off Thyristor |
Westcode Semiconductors |
| 2352 |
G1000N |
Anode-Shorted Gate Turn-Off Thyristor |
Westcode Semiconductors |
| 2353 |
GH-038 |
HYBRID GATE DRIVER IC FOR IGBT |
SanRex |
| 2354 |
GH-039 |
Hybrid gate driver IC for IGBT |
SanRex |
| 2355 |
GJH231/74H01N |
Quadruple 2-input positive NAND gate with wired-OR capability |
Mullard |
| 2356 |
GJH251/74H05N |
Sextuple single-input inverter gate open collector output transistor |
Mullard |
| 2357 |
GN2470 |
INSULATED GATE BIPOLAR TRANSISTOR |
Supertex Inc |
| 2358 |
GN2470K4 |
INSULATED GATE BIPOLAR TRANSISTOR |
Supertex Inc |
| 2359 |
GT10J301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 2360 |
GT10J303 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 2361 |
GT10J311 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 2362 |
GT10J312 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 2363 |
GT10J312(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 2364 |
GT10J321 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT |
TOSHIBA |
| 2365 |
GT10Q101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications |
TOSHIBA |
| 2366 |
GT10Q301 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 2367 |
GT15G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 2368 |
GT15J101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 2369 |
GT15J102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 2370 |
GT15J103(SM) |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
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