No. |
Part Name |
Description |
Manufacturer |
2431 |
GT60M322 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
TOSHIBA |
2432 |
GT60M323 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
TOSHIBA |
2433 |
GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation |
TOSHIBA |
2434 |
GT80J101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N .CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
2435 |
GT80J101A |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications |
TOSHIBA |
2436 |
GT8G103 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
2437 |
GT8G121 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
2438 |
GT8G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
2439 |
GT8G132 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
2440 |
GT8J101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
2441 |
GT8J102(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
2442 |
GT8Q101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
2443 |
GT8Q102(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
2444 |
GU-C40 |
MITSUBISHI GATE DRIVER FOR GCT THYRISTOR High Power Inverter Use |
Mitsubishi Electric Corporation |
2445 |
H102 |
Quad 2-input NAND gate (active pull-up), standard temperature range |
SGS-ATES |
2446 |
H102 |
Quad 2-input NAND gate (active pull-up), intermediate temperature range |
SGS-ATES |
2447 |
H102 |
Quad 2-input NAND gate (active pull-up), extended temperature range |
SGS-ATES |
2448 |
H103 |
Triple 3-input NAND gate (active pull-up), standard temperature range |
SGS-ATES |
2449 |
H103 |
Triple 3-input NAND gate (active pull-up), intermediate temperature range |
SGS-ATES |
2450 |
H103 |
Triple 3-input NAND gate (active pull-up), extended temperature range |
SGS-ATES |
2451 |
H104 |
Dual 4-input expandable NAND gate (active pull-up), standard temperature range |
SGS-ATES |
2452 |
H104 |
Dual 4-input expandable NAND gate (active pull-up), intermediate temperature range |
SGS-ATES |
2453 |
H104 |
Dual 4-input expandable NAND gate (active pull-up), extended temperature range |
SGS-ATES |
2454 |
H105 |
Dual 2-wide 2-input expandable AND-NOR gate (active pull-up), standard temperature range |
SGS-ATES |
2455 |
H105 |
Dual 2-wide 2-input expandable AND-NOR gate (active pull-up), intermediate temperature range |
SGS-ATES |
2456 |
H109 |
Dual 4-input expandable power AND gate (open collector), standard temperature range |
SGS-ATES |
2457 |
H109 |
Dual 4-input expandable power AND gate (open collector), intermediate temperature range |
SGS-ATES |
2458 |
H109 |
Dual 4-input expandable power AND gate (open collector), extended temperature range |
SGS-ATES |
2459 |
H113 |
Dual 2-input NAND gate plus dual expandable inverter (open-collector), standard temperature range |
SGS-ATES |
2460 |
H113 |
Dual 2-input NAND gate plus dual expandable inverter (open-collector), intermediate temperature range |
SGS-ATES |
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