| No. |
Part Name |
Description |
Manufacturer |
| 2341 |
20KW172A |
172.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 2342 |
20KW180 |
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 2343 |
20KW180A |
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 2344 |
20KW192 |
192.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 2345 |
20KW192A |
192.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 2346 |
20KW204 |
204.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 2347 |
20KW204A |
204.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 2348 |
20KW216 |
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 2349 |
20KW216A |
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 2350 |
20KW232 |
232.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 2351 |
20KW232A |
232.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 2352 |
20KW240 |
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 2353 |
20KW240A |
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 2354 |
20KW256 |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 2355 |
20KW256A |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 2356 |
20KW280 |
280.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 2357 |
20KW280A |
280.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 2358 |
20KW300 |
300.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 2359 |
20KW300A |
300.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 2360 |
20LF021C |
10 BASE T LOW PASS FILTER |
YCL |
| 2361 |
2222 405 . . . . . |
Integrated Passive Device (Capacitor and Varistor) |
Vishay |
| 2362 |
2EZ100 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts) |
Panjit International Inc |
| 2363 |
2EZ100 |
100 V, 2 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2364 |
2EZ100 |
100 V, 0.5 A, 2 W, glass passivated junction silicon zener diode |
TRSYS |
| 2365 |
2EZ11 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts) |
Panjit International Inc |
| 2366 |
2EZ110 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts) |
Panjit International Inc |
| 2367 |
2EZ110 |
110 V, 2 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2368 |
2EZ110 |
110 V, 0.5 A, 2 W, glass passivated junction silicon zener diode |
TRSYS |
| 2369 |
2EZ12 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts) |
Panjit International Inc |
| 2370 |
2EZ120 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts) |
Panjit International Inc |
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