No. |
Part Name |
Description |
Manufacturer |
2461 |
2KBPO2G |
2 AMP GLASS PASSIVATED SILICON BRIDGE RECTIFIER |
Fuji Electric |
2462 |
2KBPO4G |
2 AMP GLASS PASSIVATED SILICON BRIDGE RECTIFIER |
Fuji Electric |
2463 |
2KBPO6G |
2 AMP GLASS PASSIVATED SILICON BRIDGE RECTIFIER |
Fuji Electric |
2464 |
2KBPO86 |
2 AMP GLASS PASSIVATED SILICON BRIDGE RECTIFIER |
Fuji Electric |
2465 |
2KBPOO5G |
2 AMP GLASS PASSIVATED SILICON BRIDGE RECTIFIER |
Fuji Electric |
2466 |
2N3859 |
Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. |
General Electric Solid State |
2467 |
2N3859A |
Planar epitaxial passivated NPN silicon transistor. 60V, 100mA. |
General Electric Solid State |
2468 |
2N3860 |
Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. |
General Electric Solid State |
2469 |
2N4123 |
Planar epitaxial passivated NPN silicon transistor. 30V, 200mA. |
General Electric Solid State |
2470 |
2N4124 |
Planar epitaxial passivated NPN silicon transistor. 25V, 200mA. |
General Electric Solid State |
2471 |
2N4125 |
Planar epitaxial passivated PNP silicon transistor. -30V, 200mA. |
General Electric Solid State |
2472 |
2N4126 |
Planar epitaxial passivated PNP silicon transistor. -25V, 200mA. |
General Electric Solid State |
2473 |
2N4400 |
Planar epitaxial passivated NPN silicon transistor. 40V, 600mA. |
General Electric Solid State |
2474 |
2N4401 |
Planar epitaxial passivated NPN silicon transistor. 40V, 600mA. |
General Electric Solid State |
2475 |
2N4402 |
Planar epitaxial passivated PNP silicon transistor. -40V, -600mA. |
General Electric Solid State |
2476 |
2N4403 |
Planar epitaxial passivated PNP silicon transistor. -40V, -600mA. |
General Electric Solid State |
2477 |
2N4424 |
Planar epitaxial passivated NPN silicon transistor. 40V, 500mA. |
General Electric Solid State |
2478 |
2N5232 |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
2479 |
2N5232A |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
2480 |
2N5249 |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
2481 |
2N5249A |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
2482 |
2N5306 |
Planar epitaxial passivated NPN silicon Darlington transistor. 25V, 300mA. |
General Electric Solid State |
2483 |
2N5307 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
2484 |
2N5308 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
2485 |
2N5308A |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
2486 |
2N5366 |
Planar epitaxial passivated PNP silicon transistor. 40V, 300mA. |
General Electric Solid State |
2487 |
2SC150T |
Silicon NPN Transistor Low Temperature Passivation, intended for use in 27MHz Transceiver Power Output |
Hitachi Semiconductor |
2488 |
2SC154C |
Silicon NPN Transistor Triple Diffused Low Temperature Passivation, intended for use in High Voltage and Wide bandwidth video power output |
Hitachi Semiconductor |
2489 |
2W005G |
Bridge Rectifiers (Glass Passivated) |
Fairchild Semiconductor |
2490 |
2W005G |
2 AMP GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER |
Fuji Electric |
| | | |